H10D 62/115
Dielectric isolations
Official title: {Dielectric isolations, e.g. air gaps}
H10D62/115 (Dielectric isolations) appears on 13,574 US grants and 15,345 published applications in this corpus.
Search patents in H10D- Granted patents
- 13,574
- Published applications
- 15,345
- Assignees
- 989
- Inventors
- 12,463
- Latest grant
- 6 Oct 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 5 | 0 |
| 1977 | 5 | 0 |
| 1978 | 1 | 0 |
| 1979 | 4 | 0 |
| 1980 | 5 | 0 |
| 1981 | 5 | 0 |
| 1982 | 2 | 0 |
| 1983 | 3 | 0 |
| 1984 | 6 | 0 |
| 1985 | 7 | 0 |
| 1986 | 6 | 0 |
| 1987 | 7 | 0 |
| 1988 | 8 | 0 |
| 1989 | 6 | 0 |
| 1990 | 10 | 0 |
| 1991 | 9 | 0 |
| 1992 | 11 | 0 |
| 1993 | 9 | 0 |
| 1994 | 13 | 0 |
| 1995 | 15 | 0 |
| 1996 | 18 | 0 |
| 1997 | 19 | 0 |
| 1998 | 17 | 0 |
| 1999 | 30 | 0 |
| 2000 | 35 | 0 |
| 2001 | 53 | 18 |
| 2002 | 45 | 58 |
| 2003 | 66 | 68 |
| 2004 | 67 | 76 |
| 2005 | 49 | 113 |
| 2006 | 78 | 127 |
| 2007 | 67 | 130 |
| 2008 | 87 | 187 |
| 2009 | 91 | 166 |
| 2010 | 124 | 181 |
| 2011 | 171 | 218 |
| 2012 | 191 | 281 |
| 2013 | 250 | 422 |
| 2014 | 418 | 586 |
| 2015 | 705 | 1064 |
| 2016 | 1123 | 1367 |
| 2017 | 1426 | 1388 |
| 2018 | 1338 | 1212 |
| 2019 | 1341 | 1272 |
| 2020 | 1199 | 1203 |
| 2021 | 955 | 1022 |
| 2022 | 847 | 1044 |
| 2023 | 828 | 882 |
| 2024 | 791 | 877 |
| 2025 | 681 | 898 |
| 2026 | 327 | 485 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Subgroups
Granted patents
Recent patents
- Memory device with container-shaped electrode and method for fabricating the same6 Oct 2026US 12,757,372 B2Nanya Technology Corporation
- Method for fabricating memory device with container-shaped electrode6 Oct 2026US 12,757,373 B2Nanya Technology Corporation
- Junction field effect transistor with bottom gate underlying drain and optionally partially underlying top gate and method6 Oct 2026US 12,757,423 B2Globalfoundries Singapore Pte. Ltd.
- Fully-isolated MOS device6 Oct 2026US 12,757,450 B2United Microelectronics Corp.
- Semiconductor device with bottom dielectric isolation6 Oct 2026US 12,757,451 B2International Business Machines Corporation
- Electrostatic discharge circuitry for a high-voltage semiconductor device8 Oct 2026US 2026/0313927 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Semiconductor structure8 Oct 2026US 2026/0313931 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Dual gate ldmos devices for gate-all-around process flows8 Oct 2026US 2026/0313950 A1Avago Technologies International Sales Pte. Limited
- Ldmos transistor design for providing immunity to cone defects8 Oct 2026US 2026/0313951 A1Microchip Technology Incorporated
- Forming isolation regions with low parasitic capacitance and reduced damage8 Oct 2026US 2026/0313971 A1Taiwan Semiconductor Manufacturing Company.Ltd
Most cited
By later US patents
- Fin structure of FinFET1,337US 9,093,530 B2Taiwan Semiconductor Manufacturing Company.Ltd · 2015
- Structure and method for FinFET integrated with capacitor1,331US 8,860,148 B2Taiwan Semiconductor Manufacturing Company.Ltd · 2014
- Vertical gate all around (VGAA) devices and methods of manufacturing the same987US 9,536,738 B2Taiwan Semiconductor Manufacturing Company.Ltd · 2017
- Nanowire field effect transistor device having a replacement gate849US 9,472,618 B2Taiwan Semiconductor Manufacturing Company.Ltd · 2016
- Silicide regions in vertical gate all around (VGAA) devices and methods of forming same841US 9,412,817 B2Taiwan Semiconductor Manufacturing Company.Ltd · 2016