H10D 62/113
Isolations within a component, i.e. internal isolations
Official title: {Isolations within a component, i.e. internal isolations}
H10D62/113 (Isolations within a component, i.e. internal isolations) appears on 14,289 US grants and 16,142 published applications in this corpus.
Search patents in H10D- Granted patents
- 14,289
- Published applications
- 16,142
- Assignees
- 1,059
- Inventors
- 13,136
- Latest grant
- 6 Oct 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 7 | 0 |
| 1977 | 10 | 0 |
| 1978 | 6 | 0 |
| 1979 | 6 | 0 |
| 1980 | 8 | 0 |
| 1981 | 6 | 0 |
| 1982 | 2 | 0 |
| 1983 | 3 | 0 |
| 1984 | 7 | 0 |
| 1985 | 8 | 0 |
| 1986 | 7 | 0 |
| 1987 | 9 | 0 |
| 1988 | 8 | 0 |
| 1989 | 12 | 0 |
| 1990 | 13 | 0 |
| 1991 | 9 | 0 |
| 1992 | 13 | 0 |
| 1993 | 9 | 0 |
| 1994 | 13 | 0 |
| 1995 | 15 | 0 |
| 1996 | 19 | 0 |
| 1997 | 21 | 0 |
| 1998 | 17 | 0 |
| 1999 | 31 | 0 |
| 2000 | 35 | 0 |
| 2001 | 54 | 20 |
| 2002 | 48 | 58 |
| 2003 | 66 | 68 |
| 2004 | 68 | 79 |
| 2005 | 51 | 116 |
| 2006 | 81 | 138 |
| 2007 | 73 | 136 |
| 2008 | 94 | 198 |
| 2009 | 97 | 177 |
| 2010 | 134 | 189 |
| 2011 | 177 | 226 |
| 2012 | 198 | 292 |
| 2013 | 267 | 451 |
| 2014 | 438 | 619 |
| 2015 | 752 | 1134 |
| 2016 | 1192 | 1447 |
| 2017 | 1491 | 1454 |
| 2018 | 1392 | 1265 |
| 2019 | 1403 | 1339 |
| 2020 | 1264 | 1274 |
| 2021 | 1010 | 1071 |
| 2022 | 883 | 1089 |
| 2023 | 866 | 932 |
| 2024 | 824 | 922 |
| 2025 | 713 | 935 |
| 2026 | 359 | 513 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Subgroups
Granted patents
Recent patents
- Memory device with container-shaped electrode and method for fabricating the same6 Oct 2026US 12,757,372 B2Nanya Technology Corporation
- Method for fabricating memory device with container-shaped electrode6 Oct 2026US 12,757,373 B2Nanya Technology Corporation
- Metal-oxide-semiconductor capacitor structure6 Oct 2026US 12,757,416 B2United Microelectronics Corp.
- Junction field effect transistor with bottom gate underlying drain and optionally partially underlying top gate and method6 Oct 2026US 12,757,423 B2Globalfoundries Singapore Pte. Ltd.
- Fully-isolated MOS device6 Oct 2026US 12,757,450 B2United Microelectronics Corp.
- Electrostatic discharge circuitry for a high-voltage semiconductor device8 Oct 2026US 2026/0313927 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Semiconductor structure8 Oct 2026US 2026/0313931 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Dual gate ldmos devices for gate-all-around process flows8 Oct 2026US 2026/0313950 A1Avago Technologies International Sales Pte. Limited
- Ldmos transistor design for providing immunity to cone defects8 Oct 2026US 2026/0313951 A1Microchip Technology Incorporated
- Forming isolation regions with low parasitic capacitance and reduced damage8 Oct 2026US 2026/0313971 A1Taiwan Semiconductor Manufacturing Company.Ltd
Most cited
By later US patents
- Fin structure of FinFET1,337US 9,093,530 B2Taiwan Semiconductor Manufacturing Company.Ltd · 2015
- Contact structure of semiconductor device1,334US 8,823,065 B2Taiwan Semiconductor Manufacturing Company.Ltd · 2014
- Structure and method for FinFET integrated with capacitor1,331US 8,860,148 B2Taiwan Semiconductor Manufacturing Company.Ltd · 2014
- Vertical gate all around (VGAA) devices and methods of manufacturing the same987US 9,536,738 B2Taiwan Semiconductor Manufacturing Company.Ltd · 2017
- Nanowire field effect transistor device having a replacement gate849US 9,472,618 B2Taiwan Semiconductor Manufacturing Company.Ltd · 2016