H10D 62/114
Pn junction isolations
Official title: {PN junction isolations}
H10D62/114 (Pn junction isolations) appears on 566 US grants and 617 published applications in this corpus.
Search patents in H10D- Granted patents
- 566
- Published applications
- 617
- Assignees
- 218
- Inventors
- 1,083
- Latest grant
- 6 Oct 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 1 | 0 |
| 1977 | 1 | 0 |
| 1978 | 0 | 0 |
| 1979 | 1 | 0 |
| 1980 | 2 | 0 |
| 1981 | 0 | 0 |
| 1982 | 0 | 0 |
| 1983 | 0 | 0 |
| 1984 | 1 | 0 |
| 1985 | 1 | 0 |
| 1986 | 0 | 0 |
| 1987 | 0 | 0 |
| 1988 | 1 | 0 |
| 1989 | 4 | 0 |
| 1990 | 3 | 0 |
| 1991 | 1 | 0 |
| 1992 | 1 | 0 |
| 1993 | 1 | 0 |
| 1994 | 0 | 0 |
| 1995 | 0 | 0 |
| 1996 | 0 | 0 |
| 1997 | 2 | 0 |
| 1998 | 0 | 0 |
| 1999 | 0 | 0 |
| 2000 | 0 | 0 |
| 2001 | 0 | 2 |
| 2002 | 3 | 0 |
| 2003 | 0 | 0 |
| 2004 | 2 | 4 |
| 2005 | 2 | 5 |
| 2006 | 3 | 14 |
| 2007 | 6 | 7 |
| 2008 | 8 | 13 |
| 2009 | 8 | 14 |
| 2010 | 13 | 11 |
| 2011 | 15 | 11 |
| 2012 | 9 | 11 |
| 2013 | 18 | 20 |
| 2014 | 18 | 32 |
| 2015 | 38 | 51 |
| 2016 | 49 | 49 |
| 2017 | 47 | 54 |
| 2018 | 42 | 47 |
| 2019 | 54 | 50 |
| 2020 | 50 | 47 |
| 2021 | 40 | 42 |
| 2022 | 29 | 26 |
| 2023 | 27 | 40 |
| 2024 | 27 | 23 |
| 2025 | 21 | 21 |
| 2026 | 17 | 23 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
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- Suppression of parasitic acoustic waves in integrated circuit devices16 Jun 2026US 12,658,876 B2MACOM Technology Solutions Holdings, Inc.
- Power semiconductor device and method of producing a power semiconductor device26 May 2026US 12,642,020 B2Infineon Technologies AG
- Lateral mosfet having a vertical channel1 Oct 2026US 2026/0304826 A1Microchip Technology Incorporated
- Semiconductor structure24 Sep 2026US 2026/0293282 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Iii-nitride transistor comprising a plurality of isolation regions9 Jul 2026US 2026/0198038 A1Cambridge Gan Devices Limited
- Semiconductor device2 Jul 2026US 2026/0190406 A1Samsung Electronics Co., Ltd.
- High voltage schottky diode and charge pump25 Jun 2026US 2026/0181974 A1Silicon Storage Technology, Inc.
Most cited
By later US patents
- Method of fabricating a field effect transistor structure with abrupt source/drain junctions103US 6,887,762 B1Intel Corporation · 2005
- Semiconductor device edge termination structure84US 7,253,477 B2Semiconductor Components Industries, LLC · 2007
- Product comprised of FinFET devices with single diffusion break isolation structures, and methods of making such a product58US 9,171,752 B1Globalfoundries Inc. · 2015
- Semiconductor device having deep trench charge compensation regions and method55US 7,176,524 B2Semiconductor Components Industries, LLC · 2007
- Tunneling transistor suitable for low voltage operation49US 8,384,122 B1The Regents of the University of California · 2013