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US 7,253,477 B2Granted
Semiconductor device edge termination structure
AssigneeSemiconductor Components Industries, LLC
InventorsGary H. Loechelt, Peter J. Zdebel, Gordon M. Grivna
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Abstract
In one embodiment, an edge termination structure is formed in a semiconductor layer of a first conductivity type. The termination structure includes an isolation trench and a conductive layer in contact with the semiconductor layer. The semiconductor layer is formed over a semiconductor substrate of a second conductivity type. In a further embodiment, the isolation trench includes a plurality of shapes that comprise portions of the semiconductor layer.
Claims23
A semiconductor device comprising:
- a semiconductor substrate of a first conductivity type having an edge portion;
- a semiconductor layer of a second conductivity type formed overlying the semiconductor substrate so that the semiconductor layer and semiconductor substrate form a primary blocking junction for the device;
- an active device formed in a portion of the semiconductor layer, wherein the active device comprises:
- a first doped region of the second conductivity type;
- a second doped region of the first conductivity type formed in the first doped region;
- and
- a control electrode formed adjacent the first and second doped regions;
- and
- an edge termination structure formed at the edge portion, wherein the edge termination structure comprises:
- a third doped region of the second conductivity type formed in the semiconductor layer;
- a first conductive layer coupled to the third doped region;
- and
- an isolation trench formed in the semiconductor layer adjacent to the third doped region.
10 more elements
A semiconductor device comprising:
- a semiconductor substrate of a first conductivity type having an edge portion;
- a semiconductor layer of a second conductivity type formed over the semiconductor substrate;
- a first doped region of the second conductivity type formed in the semiconductor layer adjacent to the edge portion;
- a first conductive layer coupled to the first doped region;
- an isolation region formed in the semiconductor layer adjacent to the first doped region;
- a charge compensation region formed in the semiconductor layer;
- a second doped region of the second conductivity type formed in the semiconductor layer adjacent to the charge compensation region;
- a third doped region of the first conductivity type formed in the second doped region;
- and
- a control electrode formed adjacent to the second and third doped regions.
7 more elements
Dependencies are inferred from the claim text.