Suppression of parasitic acoustic waves in integrated circuit devices
AssigneeMACOM Technology Solutions Holdings, Inc.
InventorsGabriel R. Cueva, Timothy E. Boles, Wayne Mack Struble
Life of this patent
Estimating the term…
Abstract
Structures for suppressing parasitic acoustic waves in semiconductor structures and integrated circuit devices are described. Such integrated circuit devices can, typically, produce undesirable acoustic wave resonances, and the acoustic waves can degrade the performance of the devices. In that context, some embodiments described herein relate to spoiling a conductive path that participates in the generation of acoustic waves. Some embodiments relate to spoiling acoustic characteristics of an acoustic resonant structure that may be present in the vicinity of the device. Combined embodiments that spoil the conductive path and acoustic characteristics are also possible.
Claims22
A semiconductor structure, comprising:
- a substrate formed from a first base semiconductor material;
- an interface layer formed over the substrate, the interface layer being formed from the first base semiconductor material;
- and
- a number of epitaxial layers formed over the interface layer from a second base semiconductor material, the number of epitaxial layers comprising:
- a transition layer formed over the interface layer;
- and
- a conduction layer formed over the transition layer, wherein the substrate is capacitively coupled to the epitaxial layers through the interface layer.
Dependencies are inferred from the claim text.