Power semiconductor device and method of producing a power semiconductor device

A method of forming a laterally varying dopant concentration profile of an electrically activated dopant in a power semiconductor device, the method comprising:

• providing a semiconductor body;
• providing, at the semiconductor body, a mask layer having a first section and a second section, wherein the first section has a first thickness along a vertical direction and the second section has a second thickness along the vertical direction, wherein the second thickness is different from the first thickness;
• implanting a dopant to form a doped region in the semiconductor body;
• and
• subjecting each of the doped region, the first section of the mask layer, and the second section of the mask layer to a laser thermal annealing (LTA) processing step,
• wherein the doped region is a body region of a transistor cell,
• wherein the LTA processing step yields both a channel region and a body contact subregion in the body region,
• wherein the body contact subregion has a higher dopant concentration than the channel region and is displaced from the channel region based on the laterally varying dopant concentration profile.