H10D 48/362
Unipolar transistors having ohmic electrodes on emitter-like, base-like, and collector-like regions
Official title: {Unipolar transistors having ohmic electrodes on emitter-like, base-like, and collector-like regions, e.g. hot electron transistors [HET], metal base transistors [MBT], resonant tunnelling transistors [RTT], bulk barrier transistors [BBT], planar doped barrier transistors [PDBT] or charge injection transistors [CHINT]}
H10D48/362 (Unipolar transistors having ohmic electrodes on emitter-like, base-like, and collector-like regions) appears on 273 US grants and 244 published applications in this corpus.
Search patents in H10D- Granted patents
- 273
- Published applications
- 244
- Assignees
- 150
- Inventors
- 659
- Latest grant
- 15 Sep 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1978 | 1 | 0 |
| 1979 | 2 | 0 |
| 1980 | 1 | 0 |
| 1981 | 1 | 0 |
| 1982 | 1 | 0 |
| 1983 | 1 | 0 |
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| 1985 | 3 | 0 |
| 1986 | 7 | 0 |
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| 1989 | 12 | 0 |
| 1990 | 17 | 0 |
| 1991 | 8 | 0 |
| 1992 | 4 | 0 |
| 1993 | 3 | 0 |
| 1994 | 6 | 0 |
| 1995 | 7 | 0 |
| 1996 | 7 | 0 |
| 1997 | 2 | 0 |
| 1998 | 4 | 0 |
| 1999 | 6 | 0 |
| 2000 | 5 | 0 |
| 2001 | 5 | 0 |
| 2002 | 0 | 2 |
| 2003 | 3 | 3 |
| 2004 | 1 | 3 |
| 2005 | 2 | 5 |
| 2006 | 4 | 4 |
| 2007 | 1 | 1 |
| 2008 | 0 | 4 |
| 2009 | 5 | 1 |
| 2010 | 1 | 1 |
| 2011 | 0 | 3 |
| 2012 | 2 | 3 |
| 2013 | 4 | 1 |
| 2014 | 0 | 3 |
| 2015 | 4 | 4 |
| 2016 | 3 | 2 |
| 2017 | 2 | 3 |
| 2018 | 3 | 2 |
| 2019 | 1 | 7 |
| 2020 | 10 | 20 |
| 2021 | 17 | 21 |
| 2022 | 12 | 31 |
| 2023 | 18 | 45 |
| 2024 | 23 | 37 |
| 2025 | 25 | 27 |
| 2026 | 16 | 11 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
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Most cited
By later US patents
- Sub-nanoscale electronic systems and devices126US 5,589,692 AYale University · 1996
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- Sub-nanoscale electronic systems and devices90US 5,475,341 AYale University · 1995
- Quantization functional device utilizing a resonance tunneling effect and method for producing the same88US 5,739,544 AMatsushita Electric Industrial Co., Ltd. · 1998
- Quantum tunneling effect device and semiconductor composite substrate88US 6,320,220 B1Kabushiki Kaisha Toshiba · 2001