Quantum tunneling effect device and semiconductor composite substrate

A device using BL tunnel elements, comprising:

• a plurality of MOS type BL tunnel elements each defined by a quantum effect device including,
• a tunnel film having a potential barrier,
• first and second terminals from which a tunnel current flows through said tunnel film, and
• a mechanism configured to apply a high frequency voltage to of said first terminal, to supply a high frequency vibration to the potential barrier of said tunnel film, and to exponentially increase the tunnel current flowing through said tunnel film with a predetermined threshold frequency as a boundary value;
• a word line control device coupled to each of said first terminals of said plurality of BL tunnel elements;
• and
• a data line control device coupled to each of said second terminals of said plurality of BL tunnel elements.

A device using BL tunnel elements, comprising:

• a plurality of MOS type BL tunnel elements each defined by a quantum effect device including,
• a tunnel film having a potential barrier,
• first and second terminals from which a tunnel current flows through said tunnel film,
• a third terminal through which a high frequency vibration is supplied to the potential barrier of said tunnel film, and
• a mechanism configured to exponentially increase the tunnel current flowing through said tunnel film with a predetermined threshold vibration frequency as a boundary value;
• a word line control device coupled to each said third terminal of said plurality of BL tunnel elements;
• a data line control device coupled to each of said first terminals of said plurality of BL tunnel elements;
• and
• a reference line coupled to each of said second terminals of said plurality of BL tunnel elements.

A device using BL tunnel elements, comprising:

• a plurality of MOS type BL tunnel elements each defined by a quantum effect device including,
• a substrate,
• a first tunnel film formed on said substrate,
• a first gate formed on said first tunnel film,
• a second tunnel film formed on said first gate,
• a second gate formed on said second tunnel film,
• a mechanism configured to supply high frequency vibration to said first gate and to exponentially increase a tunnel current flowing between said first gate and said substrate and flowing between said first gate and said second gate with a predetermined threshold vibration frequency as a boundary value;
• a word line control device coupled to each first gate of said plurality of BL tunnel elements;
• a data line control device coupled to each second gate of said plurality of BL tunnel elements;
• and
• a reference line coupled to each substrate of said plurality of BL tunnel elements.

A device using BL tunnel elements, comprising:

• a plurality of MOS type BL tunnel elements each defined by a quantum effect device including,
• a substrate,
• a first tunnel film formed on said substrate,
• a first gate formed on said first tunnel film,
• a second tunnel film formed on said first gate,
• a second gate formed on said second tunnel film, and
• a mechanism configured to supply high frequency vibration to said second gate and to exponentially increase a tunnel current flowing between said first gate and said second gate with a predetermined threshold vibration frequency as a boundary value;
• a word line control device coupled to each second gate of said plurality of BL tunnel elements;
• a data line control device coupled to each first gate of said plurality of BL tunnel elements;
• and
• reference line coupled to each substrate of said plurality of BL tunnel elements.