Transistors with varying width nanosheet

A fin field-effect transistor circuit, comprising:

• a semiconductor substrate;
• at least one source region above the semiconductor substrate;
• at least one drain region above the semiconductor substrate;
• at least one gate above the semiconductor substrate, the at least one gate including first and second gates;
• and
• a nanosheet between the semiconductor substrate and the at least one gate, wherein the nanosheet has a first width under the first gate and a second width under the second gate.

A semiconductor device, comprising:

• a substrate;
• one or more source regions above the substrate;
• one or more drain regions above the substrate;
• first and second gates above the substrate;
• and
• a nanosheet between the substrate and the first and second gates, wherein the nanosheet comprises a corner under at least one of the one or more source regions or the one or more drain regions.