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US 12,727,206 B2Granted
Semiconductor device including two-dimensional material and electronic apparatus including the semiconductor device
AssigneeSamsung Electronics Co., Ltd.
InventorsJoungeun Yoo, Changhyun Kim, Kyung-Eun Byun, Minsu Seol, Keunwook Shin, Eunkyu Lee
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Abstract
A semiconductor device may include a channel layer including a two-dimensional (2D) semiconductor material, a gate insulating layer on a center portion of the channel layer, a gate electrode on the gate insulating layer, and a first conductive layer and a second conductive layer respectively contacting opposite sides of the channel layer. Each of the first and second conductive layers may include metal boride.
Claims20
A semiconductor device comprising:
- a channel layer including a two-dimensional (2D) semiconductor material;
- a gate insulating layer on an upper surface of the channel layer;
- a gate electrode on the gate insulating layer;
- and
- a first conductive layer and a second conductive layer respectively on opposite sides of the channel layer, wherein
- each of the first conductive layer and the second conductive layer include metal boride,
- the first conductive layer and the second conductive layer do not contact a bottom surface of the channel layer, and
- the bottom surface of the channel layer is opposite the upper surface of the channel layer.
5 more elements
Dependencies are inferred from the claim text.