H10D 48/36
Unipolar devices
H10D48/36 (Unipolar devices) appears on 361 US grants and 325 published applications in this corpus.
Search patents in H10D- Granted patents
- 361
- Published applications
- 325
- Assignees
- 176
- Inventors
- 802
- Latest grant
- 15 Sep 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1977 | 6 | 0 |
| 1978 | 4 | 0 |
| 1979 | 2 | 0 |
| 1980 | 2 | 0 |
| 1981 | 5 | 0 |
| 1982 | 3 | 0 |
| 1983 | 1 | 0 |
| 1984 | 2 | 0 |
| 1985 | 3 | 0 |
| 1986 | 8 | 0 |
| 1987 | 6 | 0 |
| 1988 | 6 | 0 |
| 1989 | 12 | 0 |
| 1990 | 18 | 0 |
| 1991 | 8 | 0 |
| 1992 | 4 | 0 |
| 1993 | 3 | 0 |
| 1994 | 7 | 0 |
| 1995 | 7 | 0 |
| 1996 | 7 | 0 |
| 1997 | 4 | 0 |
| 1998 | 4 | 0 |
| 1999 | 8 | 0 |
| 2000 | 5 | 0 |
| 2001 | 5 | 0 |
| 2002 | 0 | 2 |
| 2003 | 3 | 4 |
| 2004 | 3 | 10 |
| 2005 | 6 | 8 |
| 2006 | 5 | 6 |
| 2007 | 2 | 6 |
| 2008 | 5 | 5 |
| 2009 | 8 | 5 |
| 2010 | 4 | 3 |
| 2011 | 2 | 7 |
| 2012 | 4 | 4 |
| 2013 | 9 | 3 |
| 2014 | 3 | 4 |
| 2015 | 4 | 7 |
| 2016 | 7 | 7 |
| 2017 | 8 | 9 |
| 2018 | 4 | 5 |
| 2019 | 10 | 12 |
| 2020 | 13 | 24 |
| 2021 | 21 | 24 |
| 2022 | 13 | 32 |
| 2023 | 19 | 49 |
| 2024 | 25 | 38 |
| 2025 | 26 | 40 |
| 2026 | 17 | 11 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Subgroups
Granted patents
Recent patents
- Post CMOS compatible ferroelectric field effect transistor with AlScN dielectric and 2D material channel15 Sep 2026US 12,740,102 B2The Trustees of the University of Pennsylvania
- Semiconductor device including two-dimensional material and electronic apparatus including the semiconductor device1 Sep 2026US 12,727,206 B2Samsung Electronics Co., Ltd.
- Structure of two-dimensional material-based device having air-gap and method for preparing same1 Sep 2026US 12,727,207 B2Nanjing University
- Semiconductor device having source/drain contacts connecting 2-D material layer and method for forming the same14 Jul 2026US 12,685,042 B2National Yang Ming.Chiao Tung University
- Double gate transistor device and method of operating30 Jun 2026US 12,671,412 B2Infineon Technologies Austria AG
- Source/drain contacts connecting 2-d material layer and method for forming the same8 Oct 2026US 2026/0314276 A1National Yang Ming.Chiao Tung University
- Double gate transistor device and method of operating1 Oct 2026US 2026/0303088 A1Infineon Technologies Austria AG
- Method for manufacturing nanodevice based on single-crystalline copper (cu) thin film and nanodevice having ballistic transport characteristics24 Sep 2026US 2026/0293221 A1Postech Research and Business Development Foundation
- A method for the manufacture of a graphene-containing laminate30 Jul 2026US 2026/0223425 A1Paragraf Limited
- Transistors with varying width nanosheet9 Jul 2026US 2026/0198079 A1Taiwan Semiconductor Manufacturing Company.Ltd
Most cited
By later US patents
- Methods and devices for fabricating and assembling printable semiconductor elements883US 7,622,367 B1The Board of Trustees of the University of Illinois · 2009
- Stretchable semiconductor elements and stretchable electrical circuits765US 7,557,367 B2The Board of Trustees of the University of Illinois · 2009
- Apparatus for atomic layer deposition510US 7,456,429 B2Eastman Kodak Company · 2008
- Methods and devices for fabricating and assembling printable semiconductor elements382US 7,982,296 B2The Board of Trustees of the University of Illinois · 2011
- Methods and devices for fabricating and assembling printable semiconductor elements341US 8,440,546 B2The Board of Trustees of the University of Illinois · 2013