H10D 48/032
Of unipolar transistors having ohmic electrodes on emitter-like, base-like, and collector-like regions
Official title: {of unipolar transistors having ohmic electrodes on emitter-like, base-like, and collector-like regions, e.g. hot electron transistors [HET], metal base transistors [MBT], resonant tunneling transistors [RTT], bulk barrier transistors [BBT], planar doped barrier transistors [PDBT] or charge injection transistors [CHINT]}
H10D48/032 (Of unipolar transistors having ohmic electrodes on emitter-like, base-like, and collector-like regions) appears on 55 US grants and 35 published applications in this corpus.
Search patents in H10D- Granted patents
- 55
- Published applications
- 35
- Assignees
- 29
- Inventors
- 93
- Latest grant
- 13 Feb 2024
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1992 | 1 | 0 |
| 1993 | 4 | 0 |
| 1994 | 6 | 0 |
| 1995 | 3 | 0 |
| 1996 | 6 | 0 |
| 1997 | 2 | 0 |
| 1998 | 1 | 0 |
| 1999 | 2 | 0 |
| 2000 | 1 | 0 |
| 2001 | 0 | 0 |
| 2002 | 0 | 0 |
| 2003 | 0 | 0 |
| 2004 | 0 | 1 |
| 2005 | 0 | 0 |
| 2006 | 0 | 0 |
| 2007 | 0 | 1 |
| 2008 | 0 | 1 |
| 2009 | 1 | 0 |
| 2010 | 0 | 2 |
| 2011 | 3 | 1 |
| 2012 | 0 | 1 |
| 2013 | 1 | 2 |
| 2014 | 1 | 2 |
| 2015 | 2 | 4 |
| 2016 | 3 | 3 |
| 2017 | 5 | 3 |
| 2018 | 2 | 1 |
| 2019 | 1 | 2 |
| 2020 | 4 | 4 |
| 2021 | 2 | 3 |
| 2022 | 3 | 1 |
| 2023 | 0 | 0 |
| 2024 | 1 | 1 |
| 2025 | 0 | 1 |
| 2026 | 0 | 1 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
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Most cited
By later US patents
- Semiconductor device using whiskers265US 5,362,972 AHitachi, Ltd. · 1994
- Quantum well structure with self-aligned gate and method of making the same65US 5,548,129 AHughes Aircraft Company · 1996
- Lateral resonant tunneling device having gate electrode aligned with tunneling barriers59US 5,504,347 ATexas Instruments Incorporated · 1996
- Gated resonant tunneling device and fabricating method thereof54US 5,962,864 AKabushiki Kaisha Toshiba · 1999
- Transistors with high concentration of boron doped germanium46US 8,901,537 B2Intel Corporation · 2014