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US 5,504,347 AGranted
Lateral resonant tunneling device having gate electrode aligned with tunneling barriers
AssigneeTexas Instruments Incorporated
InventorsDejan Jovanovic, John N. Randall
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Abstract
A resonant tunneling transistor (400) with lateral carrier transport through tunneling barriers (404, 408) grown as a refilling of trenches etched partially into a transverse quantum well (410) and defining a quantum wire or quantum dot (406). The fabrication methods include use of angled deposition to create overhangs at the top of openings which define sublithographic separations for tunneling barrier locations.
Claims5
A lateral resonant tunneling structure, comprising:
- (a) a heterojunction with a semiconductor layer having a band edge offset from the corresponding band edge of an overlying material layer;
- (b) an electrode on said material layer and at least two tunneling barriers aligned to edges of said electrode and extending from said material layer into but not through said semiconductor layer;
- and
- (c) contacts to said semiconductor layer remote from said tunneling barriers.
1 more element
Dependencies are inferred from the claim text.