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US 11,133,384 B1Granted
Quantum wire resonant tunneling transistor
AssigneeKoucheng Wu
InventorKoucheng Wu
Life of this patent
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Abstract
A semiconductor transistor device includes an emitter region that includes a plurality of metal quantum wires and is connected to an emitter terminal, a base region that includes a plurality of metal quantum wires and is connected to a base terminal, a collector region comprising a plurality of metal quantum wires and is connected to a collector terminal, an emitter barrier region between the emitter region and the base region, and a collector barrier region between the collector region and the base region.
Claims20
A semiconductor transistor device, comprising:
- an emitter region comprising a plurality of metal quantum wires;
- a base region comprising a plurality of metal quantum wires;
- a collector region comprising a plurality of metal quantum wires;
- an emitter barrier region between the emitter region and the base region;
- and
- a collector barrier region between the collector region and the base region.
3 more elements
A semiconductor transistor device, comprising:
- an emitter region comprising a plurality of metal quantum wires;
- a first base region comprising a plurality of metal quantum wires;
- a second base region comprising a plurality of metal quantum wires;
- a collector region comprising a plurality of metal quantum wires;
- an emitter barrier region between the emitter region and the first base region;
- an inter-base barrier region between the first base region and the second base region;
- and
- a collector barrier region between the collector region and the second base region.
5 more elements
Dependencies are inferred from the claim text.