H10D 30/6757
Characterised by the structure of the channel
Official title: {characterised by the structure of the channel, e.g. transverse or longitudinal shape or doping profile (TFTs having channel structures for preventing kink or snapback effects H10D30/6708; TFTs having lightly-doped source or drain extensions H10D30/6715)}
H10D30/6757 (Characterised by the structure of the channel) appears on 9,757 US grants and 13,777 published applications in this corpus.
Search patents in H10D- Granted patents
- 9,757
- Published applications
- 13,777
- Assignees
- 770
- Inventors
- 10,121
- Latest grant
- 6 Oct 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 1 | 0 |
| 1977 | 3 | 0 |
| 1978 | 1 | 0 |
| 1979 | 0 | 0 |
| 1980 | 2 | 0 |
| 1981 | 0 | 0 |
| 1982 | 0 | 0 |
| 1983 | 2 | 0 |
| 1984 | 3 | 0 |
| 1985 | 3 | 0 |
| 1986 | 1 | 0 |
| 1987 | 4 | 0 |
| 1988 | 0 | 0 |
| 1989 | 3 | 0 |
| 1990 | 1 | 0 |
| 1991 | 6 | 0 |
| 1992 | 7 | 0 |
| 1993 | 9 | 0 |
| 1994 | 12 | 0 |
| 1995 | 26 | 0 |
| 1996 | 33 | 0 |
| 1997 | 32 | 0 |
| 1998 | 39 | 0 |
| 1999 | 42 | 0 |
| 2000 | 41 | 0 |
| 2001 | 56 | 26 |
| 2002 | 51 | 63 |
| 2003 | 63 | 73 |
| 2004 | 77 | 113 |
| 2005 | 68 | 129 |
| 2006 | 99 | 112 |
| 2007 | 72 | 138 |
| 2008 | 80 | 145 |
| 2009 | 99 | 163 |
| 2010 | 114 | 169 |
| 2011 | 155 | 280 |
| 2012 | 173 | 228 |
| 2013 | 254 | 269 |
| 2014 | 291 | 378 |
| 2015 | 367 | 544 |
| 2016 | 568 | 758 |
| 2017 | 724 | 799 |
| 2018 | 716 | 706 |
| 2019 | 726 | 615 |
| 2020 | 577 | 667 |
| 2021 | 551 | 721 |
| 2022 | 564 | 978 |
| 2023 | 552 | 1298 |
| 2024 | 778 | 1392 |
| 2025 | 979 | 2105 |
| 2026 | 732 | 908 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- 3D semiconductor device and method of forming the same6 Oct 2026US 12,757,391 B2Tokyo Electron Limited
- Selective deposition of gate dielectric layer of semiconductor device and the semiconductor device manufactured thereby6 Oct 2026US 12,757,424 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Conductive bridge through dielectric wall between source or drain contacts6 Oct 2026US 12,757,439 B2Intel Corporation
- Semiconductor structure and method for forming the same6 Oct 2026US 12,757,440 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Contact formation with staggered gate patterning6 Oct 2026US 12,757,441 B2International Business Machines Corporation
- Ternary content-addressable memory cells and methods for forming the same8 Oct 2026US 2026/0311760 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Semiconductor structure and method for manufacturing the same8 Oct 2026US 2026/0313867 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Multi-channel ferroelectric memory structure8 Oct 2026US 2026/0313908 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Metal oxide film, semiconductor device, and manufacturing method thereof8 Oct 2026US 2026/0313909 A1
- Semiconductor device and manufacturing method thereof8 Oct 2026US 2026/0313928 A1National Taiwan University
Most cited
By later US patents
- Semiconductor device and manufacturing method thereof4,349US 7,674,650 B2Semiconductor Energy Laboratory Co.Ltd. · 2010
- Semiconductor device and manufacturing method thereof4,064US 7,732,819 B2Semiconductor Energy Laboratory Co.Ltd. · 2010
- FINFETs with wrap-around silicide and method forming the same1,436US 9,608,116 B2Taiwan Semiconductor Manufacturing Company.Ltd · 2017
- Field effect transistor with amorphous oxide active layer containing microcrystals and gate electrode opposed to active layer through gate insulator1,026US 7,601,984 B2Canon Kabushiki Kaisha · 2009
- Methods and devices for fabricating and assembling printable semiconductor elements883US 7,622,367 B1The Board of Trustees of the University of Illinois · 2009