H10D 30/0225

Using an initial gate mask complementary to the prospective gate location

Official title: {using an initial gate mask complementary to the prospective gate location, e.g. using dummy source and drain electrodes}

H10D30/0225 (Using an initial gate mask complementary to the prospective gate location) appears on 516 US grants and 377 published applications in this corpus.

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516
Published applications
377
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140
Inventors
803
Latest grant
21 Oct 2025

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H10D 30/0225: granted patents and published applications per publication year
YearGranted patentsPublished applications
197810
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198000
198100
198220
198300
198400
198510
198600
198700
198800
198910
199010
199130
199230
199330
199440
199540
199680
1997170
199890
1999180
2000390
2001407
20024839
20033419
20043140
20051830
20063334
20071729
20081519
20091519
20101512
20111821
20121011
2013109
2014138
20151321
2016169
2017119
20181010
2019118
202054
202167
202254
202324
202432
202531
202601

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