Method for depositing a nanolaminate film by atomic layer deposition
AssigneeSharp Laboratories of America, Inc.
InventorsJohn F. Conley, Jr., Yoshi Ono, Rajendra Solanki
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Abstract
An atomic layer deposition method to deposit an oxide nanolaminate thin film is provided. The method employs a nitrate ligand in a first precursor as an oxidizer for a second precursor to form the oxide nanolaminates. Using a hafnium nitrate precursor and an aluminum precursor, the method is well suited for the deposition of a high k hafnium oxide/aluminum oxide nanolaminate dielectric for gate dielectric or capacitor dielectric applications on a hydrogen-terminated silicon surface.
Claims9
A method for using a first metal nitrate-containing precursor as an oxidizing agent for a second metal-containing precursor in an atomic layer deposition process for the formation of an oxide nanolaminate film, the method comprising the steps of:
- a. introducing a first metal nitrate-containing precursor;
- b. forming a first metal nitrate;
- c. purging the first metal nitrate-containing precursor;
- d. introducing a second metal-containing precursor;
- e. oxidizing the second metal-containing precursor in response to the first metal nitrate;
- and
- f. purging the second metal-containing precursor.
A method for using a hafnium nitrate-containing precursor as an oxidizing agent for a metal-containing precursor in an atomic layer deposition process for the formation of a hafnium oxide/metal oxide nanolaminate film, the method comprising the steps of:
- a. introducing a hafnium nitrate-containing precursor;
- b. forming a hafnium nitrate film;
- c. purging the hafnium nitrate-containing precursor;
- d. introducing a metal-containing precursor;
- e. oxidizing the metal-containing precursor in response to the hafnium nitrate film;
- and
- f. purging the metal-containing precursor.
Dependencies are inferred from the claim text.