Nanolaminate film atomic layer deposition method
AssigneeSharp Laboratories of America, Inc.
InventorsJohn F. Conley, Jr., Yoshi Ono, Rajendra Solanki
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Abstract
An atomic layer deposition method to deposit an oxide nanolaminate thin film is provided. The method employs a nitrate ligand in a first precursor as an oxidizer for a second precursor to form the oxide nanolaminates. Using a hafnium nitrate precursor and an aluminum precursor, the method is well suited for the deposition of a high k hafnium oxide/aluminum oxide nanolaminate dielectric for gate dielectric or capacitor dielectric applications on a hydrogen-terminated silicon surface.
Claims27
A method for using a first metal nitrate-containing precursor as an oxidizing agent for a second metal-containing precursor in an atomic layer deposition process for the formation of an oxide nanolaminate film, the method comprising the steps of:
- a. introducing a first metal nitrate-containing precursor;
- b. saturating a substrate surface with the first metal nitrate-containing precursor;
- c. purging the first metal nitrate-containing precursor;
- d. without an intervening step of introducing a reactant gas, introducing a second metal-containing precursor;
- e. oxidizing the second metal-containing precursor in response to the first metal nitrate-containing precursor;
- and
- f. without an intervening step of introducing a reactant gas, forming a first metal oxide and a second metal oxide in a two oxide, first nanolaminate thin film.
A method for using a hafnium nitrate-containing precursor as an oxidizing agent for a metal-containing precursor in an atomic layer deposition process for the formation of a hafnium oxide/metal oxide nanolaminate film, the method comprising the steps of:
- a. introducing a hafnium nitrate-containing precursor;
- b. saturating a substrate surface with the hafnium nitrate-containing precursor;
- c. purging the hafnium nitrate-containing precursor;
- d. without an intervening step of introducing a reactant gas, introducing a metal-containing precursor;
- e. oxidizing the metal-containing precursor in response to the hafnium nitrate-containing precursor;
- and
- f. without an intervening step of introducing a reactant gas, forming a hafnium oxide and a metal oxide in a two oxide, first nanolaminate thin film.
A method for using a hafnium nitrate precursor as an oxidizing agent for an aluminum-containing precursor in an atomic layer deposition process for the formation of a hafnium oxide/aluminum oxide nanolaminate film on a semiconductor substrate, the method comprising the steps of:
- a. providing a hydrogen-terminated silicon surface on the semiconductor substrate within an atomic layer deposition chamber;
- b. introducing a hafnium nitrate precursor into the chamber;
- c. saturating the substrate surface with the hafnium nitrate precursor;
- d. purging the chamber;
- e. without an intervening step of introducing a reactant gas, introducing an aluminum-containing precursor into the chamber;
- f. oxidizing the aluminum-containing precursor in response to the hafnium nitrate precursor;
- and
- g. without an intervening step of introducing a reactant gas, forming a hafnium oxide and an aluminum oxide in a two oxide nanolaminate thin film.
A method of forming a high-k dielectric gate oxide film, the method comprising:
- adsorbing a metal nitrate-containing precursor on a surface of a silicon substrate;
- adsorbing a metal-containing precursor on a surface of the metal nitrate-containing precursor;
- oxidizing the metal-containing precursor in response to a reaction with the metal nitrate-containing precursor;
- and
- forming a high-k dielectric gate oxide film.
Dependencies are inferred from the claim text.