H10B 99/16
Comprising memory cells having diodes
Official title: {comprising memory cells having diodes}
H10B99/16 (Comprising memory cells having diodes) appears on 52 US grants and 62 published applications in this corpus.
Search patents in H10B- Granted patents
- 52
- Published applications
- 62
- Assignees
- 34
- Inventors
- 102
- Latest grant
- 21 Apr 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1977 | 1 | 0 |
| 1978 | 0 | 0 |
| 1979 | 0 | 0 |
| 1980 | 0 | 0 |
| 1981 | 0 | 0 |
| 1982 | 0 | 0 |
| 1983 | 0 | 0 |
| 1984 | 0 | 0 |
| 1985 | 0 | 0 |
| 1986 | 0 | 0 |
| 1987 | 0 | 0 |
| 1988 | 0 | 0 |
| 1989 | 0 | 0 |
| 1990 | 0 | 0 |
| 1991 | 0 | 0 |
| 1992 | 0 | 0 |
| 1993 | 0 | 0 |
| 1994 | 0 | 0 |
| 1995 | 0 | 0 |
| 1996 | 0 | 0 |
| 1997 | 0 | 0 |
| 1998 | 1 | 0 |
| 1999 | 0 | 0 |
| 2000 | 0 | 0 |
| 2001 | 1 | 0 |
| 2002 | 1 | 1 |
| 2003 | 1 | 2 |
| 2004 | 2 | 8 |
| 2005 | 4 | 5 |
| 2006 | 4 | 3 |
| 2007 | 3 | 4 |
| 2008 | 3 | 4 |
| 2009 | 2 | 4 |
| 2010 | 5 | 4 |
| 2011 | 4 | 3 |
| 2012 | 4 | 1 |
| 2013 | 2 | 2 |
| 2014 | 1 | 0 |
| 2015 | 1 | 1 |
| 2016 | 1 | 0 |
| 2017 | 0 | 1 |
| 2018 | 0 | 1 |
| 2019 | 1 | 0 |
| 2020 | 0 | 0 |
| 2021 | 1 | 0 |
| 2022 | 0 | 0 |
| 2023 | 1 | 6 |
| 2024 | 1 | 7 |
| 2025 | 4 | 2 |
| 2026 | 3 | 3 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Methods of manufacturing 3D programmable memory devices21 Apr 2026US 12,610,540 B2Chengdu Pbm Technology Ltd.
- Stateful logic-in-memory using silicon diodes24 Mar 2026US 12,586,625 B2Korea University Research and Business Foundation
- High-density three-dimensional multilayer memory and fabrication method3 Mar 2026US 12,568,633 B2Chengdu Pbm Technology Ltd.
- High-density three-dimensional multilayer memory and fabrication method23 Dec 2025US 12,507,422 B2Chengdu Pbm Technology Ltd.
- Method of preparing programmable diode, programmable diode and ferroelectric memory9 Dec 2025US 12,495,557 B2Institute of Microelectronics, Chinese Academy of Sciences
- Memory devices with diodes and methods for manufacturing the same30 Apr 2026US 2026/0122924 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Semiconducor device and method of fabricating the same26 Mar 2026US 2026/0089977 A1
- High-density three-dimensional multilayer memory and fabrication method19 Mar 2026US 2026/0082589 A1Chengdu Pbm Technology Ltd.
- Semiconductor device and method of manufacturing the same11 Sep 2025US 2025/0287586 A1SK hynix Inc.
- Two-terminal ferroelectric perovskite diode memory element2 Jan 2025US 2025/0008852 A1Intel Corporation
Most cited
By later US patents
- Semiconductor device including junction diode contacting contact-antifuse unit comprising silicide201US 6,946,719 B2Matrix Semiconductor, Inc. · 2005
- Three-dimensional memory174US 7,081,377 B2SanDisk 3D LLC · 2006
- Electrically isolated pillars in active devices118US 6,952,043 B2Matrix Semiconductor, Inc. · 2005
- Memory device with a selection element and a control line in a substantially similar layer95US 7,391,064 B1Spansion LLC · 2008
- Nonvolatile nanotube diodes and nonvolatile nanotube blocks and systems using same and methods of making same92US 8,183,665 B2Nantero, Inc. · 2012