High-density three-dimensional multilayer memory and fabrication method

A high-density three-dimensional multilayer memory, comprising an underlying circuit part and a basic structure body disposed above the underlying circuit part, wherein the basic structure body is divided into two independent interdigitated structures, referred to as a first interdigitated structure and a second interdigitated structure respectively, by a curve-shaped division groove, the basic structure body comprises first conducting medium layers and insulating medium layers alternately stacked on top of each other from bottom to top, at least three memory cell holes are formed in the curve-shaped division groove side by side, a vertical electrode is disposed in each memory cell hole, and an insulating isolation pillar is disposed between every two adjacent memory cell holes;

• the vertical electrode, the first conducting medium layer of the interdigitated structure, and the memory medium between the vertical electrode and the first conducting medium layer form a memory structure;
• the memory can be a PN junction type semiconductor memory or a Schottky semiconductor memory;
• the memory medium is an insulating medium;
• and
• a buffer region is placed on an inner wall of the memory cell hole and at a position of the first conducting medium layer, the buffer region protrudes from the inner wall of the memory cell hole to a central axis of the memory cell hole, and the buffer region is connected to the memory medium.