Stateful logic-in-memory using silicon diodes

A stateful logic-in-memory using silicon diodes, wherein the stateful logic-in-memory comprises a plurality of silicon diodes respectively comprising an anode region, a first channel region, a second channel region and a cathode region and being respectively comprised as memory cells,

• wherein each of the plural memory cells is connected in series with a resistor after a terminal of the cathode region is connected in parallel with a terminal of another cathode region, and receives operation voltage through a terminal of the anode region, and
• the plural memory cells comprise at least one input cell and output cell, perform implication (IMP) calculation at least once based on the received operation voltage and states of the at least one input cell and output cell, and change or maintain the state of the output cell based on the IMP operation performed at least once to perform a logic operation function and a memory function.