Semiconducor device and method of fabricating the same
OwnerEuipil Kwoninventor
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Abstract
Provided are a semiconductor device and a method of fabricating the same. The semiconductor device includes a semiconductor substrate, a first and a second diffusion region formed under a surface of the semiconductor substrate, a gate and a sidewall spacer stacked on the semiconductor substrate, wherein the first diffusion region is at least one active region not being intersected by the gate and the sidewall spacer, wherein the second diffusion region includes a part of an active region intersecting the gate and the sidewall spacer, wherein there is no gate insulating layer between the gate and the semiconductor substrate.
Claims4
A method of fabricating a semiconductor device, comprising:
- forming a first and a second diffusion region in a semiconductor substrate;
- and
- forming a gate on the semiconductor substrate.
Dependencies are inferred from the claim text.