High-density three-dimensional multilayer memory and fabrication method

A fabrication method of a high-density three-dimensional multilayer memory, comprising the following steps:

• firstly, forming a basic structure body:
• setting up a preset number of first conducting medium layers and insulating medium layers in such as manner that the first conducting medium layers and the insulating medium layers are alternately stacked on top of each other to form a basic structure body;
• secondly, grooving the basic structure body:
• forming a curve-shaped division groove penetrating from the top layer to the bottom layer of the basic structure body, and dividing the basic structure body into two staggered and separated interdigitated structures by the division groove;
• thirdly, forming a preset number of memory cell holes in the division groove, wherein an insulating medium is disposed between every two adjacent memory cell holes, a vertical electrode is disposed in the memory cell hole, and a memory medium layer is disposed between the vertical electrode and the interdigitated structure;
• the vertical electrode, the memory medium and the first conducting medium are made of materials meeting requirements of a preset memory, and the memory is a PN junction type semiconductor memory, a Schottky semiconductor memory, a resistance change memory, a magnetic phase change memory, a phase change memory or a ferroelectric memory;
• and
• in the forming step, before the memory medium is disposed, the fabrication method comprises the following step:
• performing doping diffusion on the first conducting medium located on the inner wall of the division groove, so that the first conducting medium close to an inner wall of the division groove forms a buffer region made of a lightly-doped semiconductor material.