US 7,391,064 B1 · Memory device with a selection element and a control line in a substantially similar layer

Abstract

The invention facilitates manufacture of semiconductor memory components by reducing the number of layers required to implement a semiconductor memory device. The invention provides for a selection element to be formed in the same layer as one of the control lines (e.g. one of the wordline and bitline). In one embodiment of the invention, a diode is implemented as the selection element within the same layer as one of the control lines. Production of the selection element within the same layer as one of the wordline and bitline reduces problems associated with vertical stacking, increases device yield and reduces related production costs. The invention also provides an efficient method of producing memory devices with the selection element in the same layer as one of the control lines.

Claims11

Dependent claims

A memory device, comprising:

a memory element;
a first layer comprising a first control line, the first layer is coupled to the memory element;
a second layer comprising a second control line;
the second layer is coupled to the memory element;
and
a selection element comprising a n-doped region and a p-doped region, created in one of the first layer and the second layer, wherein the control line, the n-doped region and the p-doped region reside in the same layer and the selection element abuts the control line.

3 more elements

Dependencies are inferred from the claim text.

Memory device with a selection element and a control line in a substantially similar layer

Life of this patent

Memory device with a selection element and a control line in a substantially similar layer

Life of this patent

Abstract

Claims11