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US 7,081,377 B2Granted
Three-dimensional memory
AssigneeSanDisk 3D LLC
InventorJames M. Cleeves
Life of this patent
Estimating the term…
Abstract
A 3D semiconductor memory is described having rail-stacks which define conductive lines and cells. The memory levels are organized in pairs with each pair showing common lines in adjacent levels.
Claims7
In the fabrication of a three dimensional memory where memory cells are formed at the intersection of generally parallel, spaced-apart rail-stacks disposed at a plurality of rail-stack levels arranged one above the other, an improvement wherein the depth of etching in at least two etching steps used to form the rail-stacks in two adjacent rail-stack levels, arranged one above the other, approximately equal.
Dependencies are inferred from the claim text.