Electrically isolated pillars in active devices
AssigneeMatrix Semiconductor, Inc.
InventorsMichael A. Vyvoda, Manish Bhatia, James M. Cleeves, N. Johan Knall
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Abstract
A method of forming an active device is provided. The method includes performing a first patterning operation on a first plurality of layers. This first patterning operation defines a first feature of the active device. Then, a second patterning operation can be performed on at least one layer of the first plurality of layers. This second patterning operation defines a second feature of the active device. Of importance, the first and second patterning operations are performed substantially back-to-back, thereby ensuring that the active device can accurately function.
Claims9
An incipient diode structure including vertically formed diodes, the structure comprising;
- a first set of strips including a first terminal not comprising doped silicon and a first portion of a first diode, the first portion comprising doped silicon;
- a first pillar including a second portion of the first diode;
- a second set of strips including a common terminal shared by the first diode and a second diode;
- a second pillar including a first portion of the second diode;
- and
- a third set of strips including a second portion of the second diode and another terminal of the second diode, wherein each of the pillars is substantially free of stringers.
Dependencies are inferred from the claim text.