H10B 63/84
Arranged in a direction perpendicular to the substrate
Official title: {arranged in a direction perpendicular to the substrate, e.g. 3D cell arrays}
H10B63/84 (Arranged in a direction perpendicular to the substrate) appears on 2,952 US grants and 3,529 published applications in this corpus.
Search patents in H10B- Granted patents
- 2,952
- Published applications
- 3,529
- Assignees
- 243
- Inventors
- 2,862
- Latest grant
- 29 Sep 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1999 | 1 | 0 |
| 2000 | 0 | 0 |
| 2001 | 0 | 0 |
| 2002 | 3 | 3 |
| 2003 | 4 | 19 |
| 2004 | 10 | 12 |
| 2005 | 10 | 13 |
| 2006 | 4 | 24 |
| 2007 | 14 | 22 |
| 2008 | 23 | 46 |
| 2009 | 11 | 81 |
| 2010 | 51 | 121 |
| 2011 | 76 | 154 |
| 2012 | 108 | 157 |
| 2013 | 176 | 184 |
| 2014 | 181 | 218 |
| 2015 | 235 | 196 |
| 2016 | 213 | 171 |
| 2017 | 199 | 196 |
| 2018 | 167 | 171 |
| 2019 | 213 | 238 |
| 2020 | 216 | 284 |
| 2021 | 233 | 292 |
| 2022 | 195 | 225 |
| 2023 | 184 | 215 |
| 2024 | 192 | 194 |
| 2025 | 155 | 164 |
| 2026 | 78 | 129 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Subgroups
Granted patents
Recent patents
- Thin film transistors and related fabrication techniques29 Sep 2026US 12,751,044 B2Micron Technology, Inc.
- Diode device with programmable conducting current and array preparation method thereof29 Sep 2026US 12,751,218 B2Zhejiang University
- Three-dimensional memory array and preparation method thereof22 Sep 2026US 12,744,062 B2Peking University
- 3D cell and array structures22 Sep 2026US 12,744,086 B2NEO Semiconductor, Inc.
- Semiconductor device and method of manufacturing the same15 Sep 2026US 12,740,340 B2Samsung Electronics Co., Ltd.
- Three-dimensional memory device and method for forming the same8 Oct 2026US 2026/0313898 A1Fujian Jinhua Integrated Circuit Co., Ltd.
- Semiconductor structure containing RRAM and method for preparing same8 Oct 2026US 2026/0313915 A1Shanghai Huali Integrated Circuit Corporation
- Three dimensional semiconductor device with memory stack8 Oct 2026US 2026/0313917 A1Taiwan Semiconductor Manufacturing Company.Ltd
- 3D Stackable Memory and Methods of Manufacture1 Oct 2026US 2026/0304789 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Bottom electrode structure in memory device1 Oct 2026US 2026/0305185 A1Taiwan Semiconductor Manufacturing Company.Ltd
Most cited
By later US patents
- Semiconductor device and method of manufacturing the same473US 8,710,580 B2Kabushiki Kaisha Toshiba · 2014
- Three-dimensional (3D) programmable device422US 6,501,111 B1Intel Corporation · 2002
- Methods of forming embedded resistors for resistive random access memory cells347US 9,142,764 B1Intermolecular, Inc. · 2015
- Vertically stacked field programmable nonvolatile memory and method of fabrication305US 6,483,736 B2Matrix Semiconductor, Inc. · 2002
- Three-dimensional array of re-programmable non-volatile memory elements having vertical bit lines288US 7,983,065 B2SanDisk 3D LLC · 2011