H01S 5/305
Characterised by the doping materials used in the laser structure
Official title: {characterised by the doping materials used in the laser structure}
H01S5/305 (Characterised by the doping materials used in the laser structure) appears on 1,365 US grants and 1,406 published applications in this corpus.
Search patents in H01S- Granted patents
- 1,365
- Published applications
- 1,406
- Assignees
- 464
- Inventors
- 2,404
- Latest grant
- 29 Sep 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1977 | 2 | 0 |
| 1978 | 0 | 0 |
| 1979 | 3 | 0 |
| 1980 | 1 | 0 |
| 1981 | 3 | 0 |
| 1982 | 3 | 0 |
| 1983 | 1 | 0 |
| 1984 | 1 | 0 |
| 1985 | 2 | 0 |
| 1986 | 2 | 0 |
| 1987 | 4 | 0 |
| 1988 | 8 | 0 |
| 1989 | 9 | 0 |
| 1990 | 9 | 0 |
| 1991 | 19 | 0 |
| 1992 | 8 | 0 |
| 1993 | 18 | 0 |
| 1994 | 25 | 0 |
| 1995 | 13 | 0 |
| 1996 | 23 | 0 |
| 1997 | 12 | 0 |
| 1998 | 32 | 0 |
| 1999 | 28 | 0 |
| 2000 | 25 | 0 |
| 2001 | 19 | 16 |
| 2002 | 36 | 50 |
| 2003 | 41 | 59 |
| 2004 | 53 | 58 |
| 2005 | 50 | 81 |
| 2006 | 49 | 69 |
| 2007 | 40 | 76 |
| 2008 | 42 | 74 |
| 2009 | 57 | 63 |
| 2010 | 91 | 69 |
| 2011 | 53 | 50 |
| 2012 | 48 | 48 |
| 2013 | 35 | 30 |
| 2014 | 47 | 28 |
| 2015 | 36 | 40 |
| 2016 | 32 | 32 |
| 2017 | 36 | 38 |
| 2018 | 38 | 35 |
| 2019 | 51 | 44 |
| 2020 | 43 | 77 |
| 2021 | 38 | 64 |
| 2022 | 40 | 55 |
| 2023 | 38 | 52 |
| 2024 | 36 | 85 |
| 2025 | 46 | 69 |
| 2026 | 19 | 44 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Subgroups
Granted patents
Recent patents
- Vertical cavity surface emitting laser element and method of producing vertical cavity surface emitting laser element29 Sep 2026US 12,749,871 B2Sony Group Corporation
- Vertical cavity surface emitting laser device and method of producing a vertical cavity surface emitting laser device15 Sep 2026US 12,738,714 B2Sony Group Corporation
- Optoelectronic device comprising a III-V semiconductor membrane laser source forming a lateral p-i-n junction1 Sep 2026US 12,726,001 B2Commissariat A L' Energie Atomique Et Aux Energies Alternatives
- Semiconductor laser device and method of manufacturing the same28 Jul 2026US 12,695,274 B2Nuvoton Technology Corporation Japan
- Optoelectronic component7 Jul 2026US 12,676,451 B2Centre National De La Recherche Scientifique
- Semiconductor optical amplifier for laser devices, particularly of the quantum cascade type, and laser device comprising said optical amplifier8 Oct 2026US 2026/0312369 A1Pjfc Semiconductors Societa' A Responsabilita' Limitata Semplificata
- Thin quantum barrier with high aluminum content for ultraviolet light emitters17 Sep 2026US 2026/0282604 A1The Regents of the University of California
- Surface emitting laser and ranging device10 Sep 2026US 2026/0269571 A1Sony Group Corporation
- Vertical-cavity light-emitting element3 Sep 2026US 2026/0261097 A1Stanley Electric Co., Ltd.
- Vertical cavity light-emitting element20 Aug 2026US 2026/0246236 A1Stanley Electric Co., Ltd.
Most cited
By later US patents
- Blue light-emitting diode with degenerate junction structure297US 5,338,944 ACree Research, Inc. · 1994
- Nitride semiconductor device with improved lifetime and high output power273US 6,586,762 B2Nichia Corporation · 2003
- Doped group III-V nitride materials, and microelectronic devices and device precursor structures comprising same189US 7,919,791 B2Cree, Inc. · 2011
- Optical device structure using GaN substrates and growth structures for laser applications184US 8,294,179 B1Soraa, Inc. · 2012
- Nitride-compound semiconductor device176US 6,316,785 B1Kabushiki Kaisha Toshiba · 2001