Semiconductor laser device and method of manufacturing the same

A semiconductor laser device that emits laser light, the semiconductor laser device comprising:

• a substrate;
• an N-type cladding layer above the substrate;
• an active layer above the N-type cladding layer;
• and
• a P-type cladding layer above the active layer,
• wherein the active layer includes:
• a well layer;
• a P-side first barrier layer above the well layer;
• and
• a P-side second barrier layer above the P-side first barrier layer,
• the P-side second barrier layer has an Al composition ratio higher than an Al composition ratio of the P-side first barrier layer,
• the P-side second barrier layer has band gap energy greater than band gap energy of the P-side first barrier layer,
• the semiconductor laser device further comprises:
• a P-type guiding layer between the P-side second barrier layer and the P-type cladding layer;
• and
• a P-side high Al composition layer between the well layer and the P-side first barrier layer,
• the P-side high Al composition layer has an Al composition ratio higher than the Al composition ratio of the P-side first barrier layer,
• the P-type guiding layer has band gap energy greater than the band gap energy of the P-side second barrier layer, and
• the semiconductor laser device has an end face window structure in which band gap energy of a portion of the well layer in a vicinity of an end face that emits the laser light is greater than band gap energy of a central portion of the well layer in a resonator length direction.