Vertical cavity surface emitting laser device and method of producing a vertical cavity surface emitting laser device

A vertical cavity surface emitting laser device, comprising:

• a first reflection mirror configured to reflect light of a specific wavelength;
• a second reflection mirror configured to reflect the light of the specific wavelength;
• a first semiconductor layer between the first reflection mirror and the second reflection mirror, wherein the first semiconductor layer includes a semiconductor material having a first conductivity type;
• a second semiconductor layer between the first reflection mirror and the second reflection mirror, wherein the second semiconductor layer includes a semiconductor material having a second conductivity type;
• a tunnel junction layer between the first reflection mirror and the second reflection mirror, wherein
• the tunnel junction layer includes a first doped layer of the first conductivity type and a second doped layer of the second conductivity type,
• the first doped layer is joined with the second doped layer in the tunnel junction layer,
• each of the first doped layer and the second doped layer has a doping concentration higher than that of the first semiconductor layer and the second semiconductor layer,
• each of the first doped layer and the second doped layer includes:
• an inner peripheral region on an inner peripheral side of the tunnel junction layer when viewed from a direction perpendicular to a layer surface of the tunnel junction layer, and
• an outer peripheral region surrounding the inner peripheral region,
• the inner peripheral region of the each of the first doped layer and the second doped layer includes Al, and
• the outer peripheral region of the each of the first doped layer and the second doped layer includes an Al oxide;
• and
• a light-emitting layer between the first reflection mirror and the second reflection mirror, wherein
• the light-emitting layer is configured to emit the light by carrier recombination, and
• the vertical cavity surface emitting laser device has a mesa structure that has a current injection region where a current that passes through the inner peripheral region and flows into the light-emitting layer concentrates.