Blue light-emitting diode with degenerate junction structure

A light emitting diode that emits light in the blue region of the visible spectrum with increased brightness and efficiency, said light emitting diode comprising:

• an n-type silicon carbide substrate;
• an n-type epitaxial layer of silicon carbide on said n-type substrate;
• a compensated p-type epitaxial layer of silicon carbide on said n-type layer and defining a light emitting p-n junction between said p-type layer and said n-type layer;
• a degenerate junction on said p-type layer, said degenerate junction being formed of a p-type epitaxial layer and an n-type epitaxial layer of silicon carbide, with said p-type portion of said degenerate junction being adjacent said p-type layer of silicon carbide;
• and
• a second epitaxial layer of n-type silicon carbide on said n-type layer of said degenerate junction.

A light emitting diode that emits light in the blue region of the visible spectrum with increased brightness and efficiency, said light emitting diode comprising:

• an n-type silicon carbide substrate;
• a degenerate junction on said n-type substrate, said degenerate junction diode being formed of a p-type epitaxial layer and an n-type epitaxial layer of silicon carbide, with said n-type layer of said degenerate junction being adjacent said n-type substrate;
• a compensated p-type epitaxial layer of silicon carbide on said p-type layer of said degenerate junction;
• an n-type epitaxial layer of silicon carbide on said compensated p-type epitaxial layer, and defining a light emitting p-n junction between said p-type layer and said n-type layer;
• and
• a second epitaxial layer of n-type silicon carbide on said compensated n-type layer.

A light emitting diode that emits light in the blue region of the visible spectrum with increased brightness and efficiency, said light emitting diode comprising:

• an n-type silicon carbide substrate;
• an n-type layer of silicon carbide on said n-type substrate;
• a p-type layer of silicon carbide on said n-type layer and defining a light emitting p-n junction between said p-type layer and said n-type layer;
• and
• a degenerate junction on said p-type layer, said degenerate junction being formed of a p-type portion and an n-type portion of silicon carbide, with said p-type portion of said degenerate junction being adjacent said p-type layer of silicon carbide.