H01S 5/3086
Doping of the active layer
Official title: {doping of the active layer}
H01S5/3086 (Doping of the active layer) appears on 208 US grants and 191 published applications in this corpus.
Search patents in H01S- Granted patents
- 208
- Published applications
- 191
- Assignees
- 119
- Inventors
- 436
- Latest grant
- 2 Jun 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1979 | 1 | 0 |
| 1980 | 0 | 0 |
| 1981 | 0 | 0 |
| 1982 | 1 | 0 |
| 1983 | 0 | 0 |
| 1984 | 0 | 0 |
| 1985 | 0 | 0 |
| 1986 | 0 | 0 |
| 1987 | 1 | 0 |
| 1988 | 0 | 0 |
| 1989 | 2 | 0 |
| 1990 | 2 | 0 |
| 1991 | 4 | 0 |
| 1992 | 1 | 0 |
| 1993 | 0 | 0 |
| 1994 | 4 | 0 |
| 1995 | 1 | 0 |
| 1996 | 1 | 0 |
| 1997 | 2 | 0 |
| 1998 | 3 | 0 |
| 1999 | 3 | 0 |
| 2000 | 4 | 0 |
| 2001 | 4 | 1 |
| 2002 | 3 | 5 |
| 2003 | 3 | 8 |
| 2004 | 7 | 8 |
| 2005 | 11 | 14 |
| 2006 | 7 | 12 |
| 2007 | 10 | 9 |
| 2008 | 5 | 8 |
| 2009 | 9 | 6 |
| 2010 | 8 | 6 |
| 2011 | 6 | 7 |
| 2012 | 7 | 9 |
| 2013 | 5 | 4 |
| 2014 | 9 | 6 |
| 2015 | 10 | 10 |
| 2016 | 8 | 11 |
| 2017 | 10 | 13 |
| 2018 | 9 | 7 |
| 2019 | 7 | 7 |
| 2020 | 13 | 13 |
| 2021 | 7 | 7 |
| 2022 | 7 | 8 |
| 2023 | 3 | 3 |
| 2024 | 5 | 4 |
| 2025 | 2 | 2 |
| 2026 | 3 | 3 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Subgroups
Granted patents
Recent patents
- Method for producing nitride crystal and nitride crystal2 Jun 2026US 12,644,201 B2Mitsubishi Chemical Corporation
- Optical semiconductor device and semiconductor laser device10 Feb 2026US 12,548,983 B2Denso Corporation
- Germanium-on-silicon laser in CMOS technology13 Jan 2026US 12,525,771 B2STMicorelectronics (Crolles 2) SAS
- Dilute nitride long-wavelength emitter with improved performance over temperature9 Sep 2025US 12,413,048 B2Lumentum Operations LLC
- Semiconductor device4 Feb 2025US 12,218,204 B2Suzhou Lekin Semiconductor Co., Ltd.
- Thin quantum barrier with high aluminum content for ultraviolet light emitters17 Sep 2026US 2026/0282604 A1The Regents of the University of California
- A semiconductor light-emitting structure and a method for manufacturing the semiconductor light-emitting structure14 May 2026US 2026/0135351 A1Everbright Institute of Semiconductor Photonics Co., Ltd.
- Hybrid iii-v silicon optical devices with oxide-based current confinement2 Apr 2026US 2026/0095026 A1Intel Corporation
- Semiconductor device9 Oct 2025US 2025/0318324 A1Epistar Corporation
- Semiconductor device1 May 2025US 2025/0142912 A1Suzhou Lekin Semiconductor Co., Ltd.
Most cited
By later US patents
- Nitride semiconductor device with improved lifetime and high output power273US 6,586,762 B2Nichia Corporation · 2003
- Group-III nitride semiconductor light-emitting device110US 6,153,894 AShowa Denko K. K. · 2000
- Semiconductor laser device56US 4,961,197 AHitachi, Ltd. · 1990
- Nitride semiconductor device53US 6,838,693 B2Nichia Corporation · 2005
- Gallium nitride type compound semiconductor light emitting element52US 5,793,054 ANEC Corporation · 1998