Hybrid iii-v silicon optical devices with oxide-based current confinement

A photonic integrated circuit (PIC), comprising:

• an optical waveguide extending over a crystalline silicon substrate;
• and
• a hybrid silicon-quantum dot laser (HSQDL), wherein the HSQDL comprises:
• a contact metallization on a mesa, the mesa comprising a stack of III-V semiconductor material layers over an active portion of the optical waveguide, wherein:
• the contact metallization has a first width, larger than a second width of an active portion of the optical waveguide;
• and
• the stack of III-V semiconductor material layers includes one or more material layers comprising Al, a perimeter portion of which further comprises O proximal to a sidewall of the mesa.

A method comprising:

• forming a hybrid structure comprising a III-V material stack over an optical waveguide comprising predominantly silicon, wherein the III-V material stack comprises a first impurity doped material over a second impurity doped material;
• converting an edge portion of a first III-V material layer within the III-V material stack into a compound comprising Al and O by oxidizing the first III-V material layer from an edge of the stack;
• forming a first contact to the first impurity doped material;
• and
• forming a second contact to the second impurity doped material.