US 12,218,204 B2Granted

Semiconductor device

AssigneeSuzhou Lekin Semiconductor Co., Ltd.

InventorsHa Jong Bong, Jae Gu Lim

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Abstract

Disclosed in an embodiment is a semiconductor device comprising a semiconductor structure, which comprises a first conductive semiconductor layer, a second conductive semiconductor layer, and an active layer disposed between the first conductive semiconductor layer and the second conductive semiconductor layer, wherein: the first conductive semiconductor layer comprises a first super lattice layer comprising a plurality of first sub layers and a plurality of second sub layers, the first and second sub layers being alternately arranged; the semiconductor structure emits ions of indium, aluminum, and a first and second dopant during a primary ion irradiation; the intensity of indium ions emitted from the active layer includes a maximum indium intensity peak; the doping concentration of the first dopant emitted from the first conductive semiconductor layer includes a maximum concentration peak; the maximum indium intensity peak is disposed to be spaced from the maximum concentration peak in a first direction; the intensity of indium ions emitted from the plurality of first sub layers has a plurality of first indium intensity peaks; the doping concentration of the first dopant emitted from the plurality of first sub layers has a plurality of first concentration peaks; and the plurality of first indium intensity peaks and the plurality of first concentration peaks are disposed between the maximum indium intensity peak and the maximum concentration peak.

Claims12

Dependent claims

A semiconductor device comprising:

a semiconductor structure including a first conductive semiconductor layer, a second conductive semiconductor layer, and an active layer configured to emit light and disposed between the first conductive semiconductor layer and the second conductive semiconductor layer,
wherein the first conductive semiconductor layer includes a first superlattice layer including a plurality of first sub layers and a plurality of second sub layers, and individual first sublayer of the plurality of first sub layers and individual second sublayer of the plurality of second sub layers are alternately disposed,
wherein the first conductive semiconductor layer further includes a second superlattice layer disposed between the active layer and the first superlattice layer,
wherein the first sub layer includes a composition of indium,
wherein a maximum doping concentration of a first dopant in each of the plurality of first sub layers is different from a maximum doping concentration of the first dopant in each of the plurality of second sub layers, and a concentration of indium in each of the plurality of first sub layers is higher than a concentration of indium in each of the plurality of second sub layers,
wherein a concentration of indium in the active layer is higher than a concentration of indium in the second superlattice layer, and the concentration of indium in the second superlattice layer is higher than a concentration of indium in the first superlattice layer, and
wherein a portion of the first conductive semiconductor layer that is between the substrate and the first superlattice layer includes the highest doping concentration of the first dopant in the semiconductor device.

4 more elements

Dependencies are inferred from the claim text.

Facts

Application: 16/768,401Filed 30 Nov 2018
Priority: KR 10-2017-01644831 Dec 2017
Published: US 2020/0321440 A18 Oct 2020
Granted: 4 Feb 2025
Term ends: Not estimatedThe source records don’t support an estimate.

Classification12 codes

H10D 62/824
Heterojunctions: comprising only Group III-V materials heterojunctions, e.g. GaN/AlGaN heterojunctions
H10H 20/812
Having quantum effect structures or superlattices, e.g. tunnel junctions: within the light-emitting regions, e.g. having quantum confinement…
H01S 5/3086
Characterised by the doping materials used in the laser structure: doping of the active layer
H01S 5/323
Comprising PN junctions, e.g. hetero- or double- heterostructures: in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser