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US 12,525,771 B2Granted
Germanium-on-silicon laser in CMOS technology
AssigneeSTMicorelectronics (Crolles 2) SAS
InventorsMathias Prost, Moustafa El Kurdi, Philippe Boucaud, Frederic Boeuf
Life of this patent
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Abstract
A germanium waveguide is formed from a P-type silicon substrate that is coated with a heavily-doped N-type germanium layer and a first N-type doped silicon layer. Trenches are etched into the silicon substrate to form a stack of a substrate strip, a germanium strip, and a first silicon strip. This structure is then coated with a silicon nitride layer.
Claims20
A method of manufacturing a germanium waveguide, comprising:
- coating a semiconductor substrate with a germanium layer having a first N-type dopant level;
- forming an N-type doped germanium strip having a second N-type dopant level, greater than the first N-type dopant level, on the germanium layer;
- depositing a P-type doped silicon/germanium strip on the germanium layer at a first side of the N-type doped germanium strip;
- depositing an N-type doped silicon/germanium strip on the germanium layer at a second side of the N-type doped germanium strip opposite the first side;
- and
- depositing a silicon nitride layer over an upper surface of the N-type doped germanium strip.
3 more elements
A method of manufacturing a germanium waveguide comprising;
- coating a semiconductor substrate with a germanium layer;
- forming an N-type doped germanium strip on the germanium layer;
- coating the N-type doped germanium strip with a further N-type doped germanium strip, wherein the further N-type doped germanium strip has a doping level less than the N-type doped germanium strip;
- depositing a P-type doped silicon/germanium strip on the germanium layer at a first side of the N-type doped germanium strip;
- depositing an N-type doped silicon/germanium strip on the germanium layer at a second side of the N-type doped germanium strip opposite the first side;
- and
- depositing a silicon nitride layer over an upper surface of the N-type doped germanium strip.
4 more elements
A germanium waveguide, comprising:
- a semiconductor substrate;
- a germanium layer having a first N-type dopant level coating the semiconductor substrate;
- an N-type doped germanium strip having a second N-type dopant level, greater than the first N-type dopant level, on the germanium layer;
- a P-type doped silicon/germanium strip on the germanium layer at a first side of the N-type doped germanium strip;
- an N-type doped silicon/germanium strip on the germanium layer at a second side of the N-type doped germanium strip opposite the first side;
- and
- a silicon nitride layer over an upper surface of the N-type doped germanium strip.
4 more elements
A germanium waveguide, comprising:
- a semiconductor substrate;
- a germanium layer coating the semiconductor substrate;
- an N-type doped germanium strip on the germanium layer;
- a further N-type doped germanium strip coating the N-type doped germanium strip, wherein the further N-type doped germanium strip has a doping level less than the N-type doped germanium strip;
- a P-type doped silicon/germanium strip on the germanium layer at a first side of the N-type doped germanium strip;
- an N-type doped silicon/germanium strip on the germanium layer at a second side of the N-type doped germanium strip opposite the first side;
- and
- a silicon nitride layer over an upper surface of the N-type doped germanium strip.
5 more elements
Dependencies are inferred from the claim text.