H01S 5/309
Doping of barrier layers that confine charge carriers in the laser structure
Official title: {doping of barrier layers that confine charge carriers in the laser structure, e.g. the barriers in a quantum well structure (barriers in quantum wells per se H01S5/3407)}
H01S5/309 (Doping of barrier layers that confine charge carriers in the laser structure) appears on 71 US grants and 68 published applications in this corpus.
Search patents in H01S- Granted patents
- 71
- Published applications
- 68
- Assignees
- 53
- Inventors
- 179
- Latest grant
- 9 Sep 2025
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1989 | 2 | 0 |
| 1990 | 1 | 0 |
| 1991 | 2 | 0 |
| 1992 | 0 | 0 |
| 1993 | 0 | 0 |
| 1994 | 1 | 0 |
| 1995 | 1 | 0 |
| 1996 | 0 | 0 |
| 1997 | 0 | 0 |
| 1998 | 0 | 0 |
| 1999 | 1 | 0 |
| 2000 | 0 | 0 |
| 2001 | 0 | 0 |
| 2002 | 0 | 1 |
| 2003 | 1 | 1 |
| 2004 | 2 | 1 |
| 2005 | 0 | 2 |
| 2006 | 1 | 3 |
| 2007 | 3 | 2 |
| 2008 | 1 | 3 |
| 2009 | 1 | 3 |
| 2010 | 3 | 3 |
| 2011 | 4 | 2 |
| 2012 | 1 | 6 |
| 2013 | 3 | 1 |
| 2014 | 5 | 1 |
| 2015 | 5 | 6 |
| 2016 | 5 | 5 |
| 2017 | 3 | 6 |
| 2018 | 6 | 4 |
| 2019 | 3 | 4 |
| 2020 | 6 | 4 |
| 2021 | 4 | 4 |
| 2022 | 2 | 2 |
| 2023 | 1 | 2 |
| 2024 | 2 | 0 |
| 2025 | 1 | 0 |
| 2026 | 0 | 2 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
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- Thin quantum barrier with high aluminum content for ultraviolet light emitters17 Sep 2026US 2026/0282604 A1The Regents of the University of California
- A semiconductor light-emitting structure and a method for manufacturing the semiconductor light-emitting structure14 May 2026US 2026/0135351 A1Everbright Institute of Semiconductor Photonics Co., Ltd.
- Dilute nitride long-wavelength emitter with improved performance over temperature17 Aug 2023US 2023/0261443 A1Lumentum Operations LLC
- Semiconductor laser device and method of manufacturing the same26 Jan 2023US 2023/0021325 A1Nuvoton Technology Corporation Japan
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Most cited
By later US patents
- Nitride semiconductor device43US 6,657,234 B1Nichia Corporation · 2003
- Semiconductor laser of modulation doping quantum well structure with stopper against dopant dispersion and manufacturing method thereof26US 5,319,657 AMatsushita Electric Industrial Co., Ltd. · 1994
- Multiple quantum well structure and semiconductor device using the same23US 5,392,306 AKokusai Denshin Denwa Kabushiki Kaisha · 1995
- Nitride laser diode with engineered non-uniform alloy composition in the n-cladding layer22US 9,444,224 B2Palo Alto Research Center Incorporated · 2016
- Semiconductor laser device having plurality of layers for emitting lights of different wavelengths and method of driving the same21US 5,033,053 ACanon Kabushiki Kaisha · 1991