Multiple quantum well structure and semiconductor device using the same

A multiple quantum well structure formed by laminating at least two sets of quantum well layers each having a thickness substantially equal to the de Brogie's wave-length and barrier layers each having an energy gap greater than that of each of the quantum well layers, said multiple quantum well structure having p-type and n-type semiconductor layers disposed to sandwich the multiple quantum well structure therebetween,

• characterized in that said multiple quantum well structure is doped with at least either one of p-type and n-type impurities so that the energy band of said entire multiple quantum well structure slopes upward from the p-type semiconductor layer to the n-type semiconductor layer, permitting substantially uniform distribution of injected carriers throughout it, and only its barrier layers are doped with at least either one of p-type or n-type impurities so that the energy band of the entire multiple quantum well structure slopes therein.

A multiple quantum well structure formed by laminating at least two sets of quantum well layers each having a thickness substantially equal to the de Broglie's wave-length and barrier layers each having an energy gap greater than that of each of the quantum well layers, said multiple quantum well structure having p-type and n-type semiconductor layers disposed to sandwich the multiple quantum well structure therebetween,

• characterized in that said multiple quantum well structure is doped with at least either one of p-type or n-type impurities so that the energy band of said entire multiple quantum well structure slopes upward from the p-type semiconductor layer to the n-type semiconductor layer, permitting substantially uniform distribution of injected carders throughout it,
• and only said well layers are doped with at least either one of p-type or n-type impurities so that the energy band of the entire multiple quantum well structure slopes therein.