Semiconductor laser and electronic apparatus

An electronic apparatus comprising

• a semiconductor laser serving as a light source,
• the semiconductor laser including a semiconductor stack including, in a following order, a first cladding layer, an active layer, one or a plurality of low-concentration impurity layers, a contact layer, and a second cladding layer that includes a transparent conductive material, the semiconductor stack having, in a portion including the contact layer, a ridge extending in a stacked in-plane direction,
• the one or the plurality of low-concentration impurity layers having an impurity concentration of 5.0×1017 cm−3 or less, a total thickness of the low-concentration impurity layer being 250 nm or more and 1000 nm or less,
• a distance between the first cladding layer and the low-concentration impurity layer closest to the first cladding layer being 150 nm or less.

An electronic apparatus comprising

• a semiconductor laser serving as a light source,
• the semiconductor laser including a semiconductor stack including, in a following order, a first cladding layer, an active layer, one or a plurality of low-concentration impurity layers that has an impurity concentration of 5.0×1017 cm−3 or less, a contact layer, and a second cladding layer that includes a transparent conductive material, the semiconductor stack having, in a portion including the contact layer, a ridge extending in a stacked in-plane direction,
• the second cladding layer being located away from a light waveguide region that is to be generated inside the semiconductor stack in a case where the semiconductor laser is driven,
• a ratio of a light intensity at a boundary of the second cladding layer closer to the active layer to a maximum light intensity being less than 0.007.