Semiconductor device
AssigneeSuzhou Lekin Semiconductor Co., Ltd.
InventorsHa Jong BONG, Jae Gu LIM
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Abstract
A semiconductor device includes a semiconductor structure including a first conductive semiconductor layer, a second conductive semiconductor layer disposed on the first conductive semiconductor layer, and an active layer disposed between the first conductive semiconductor layer and the second conductive semiconductor layer. The first conductive semiconductor layer includes a first superlattice layer including a plurality of first sub layers and a plurality of second sub layers, and a first sub layer of the plurality of first sub layers and a second sub layer of the plurality of second sub layers are alternately disposed. The semiconductor structure includes a composition of a first dopant which is a n-type dopant.
Claims20
A semiconductor device comprising:
- a semiconductor structure comprising a first conductive semiconductor layer, a second conductive semiconductor layer disposed on the first conductive semiconductor layer, and an active layer disposed between the first conductive semiconductor layer and the second conductive semiconductor layer,
- wherein the first conductive semiconductor layer comprises a first superlattice layer comprising a plurality of first sub layers and a plurality of second sub layers, and a first sub layer of the plurality of first sub layers and a second sub layer of the plurality of second sub layers are alternately disposed,
- wherein the semiconductor structure comprises a composition of a first dopant which is a n-type dopant,
- wherein the semiconductor structure comprises a first region and a second region disposed on the first region, and the first region and the second region are disposed under the first superlattice layer in a direction from the first conductive semiconductor layer to the second conductive semiconductor layer, and
- wherein a first doping concentration of the first dopant in the first region is greater than a second doping concentration of the first dopant in the second region.
A liquid crystal display device comprising a semiconductor device, wherein the semiconductor device comprises:
- a semiconductor structure comprising a first conductive semiconductor layer, a second conductive semiconductor layer disposed on the first conductive semiconductor layer, and an active layer disposed between the first conductive semiconductor layer and the second conductive semiconductor layer,
- wherein the first conductive semiconductor layer comprises a first superlattice layer comprising a plurality of first sub layers and a plurality of second sub layers, and a first sub layer of the plurality of first sub layers and a second sub layer of the plurality of second sub layers are alternately disposed,
- wherein the semiconductor structure comprises a composition of a first dopant which is a n-type dopant,
- wherein the semiconductor structure comprises a first region and a second region disposed on the first region, and the first region and the second region are disposed under the first superlattice layer in a direction from the first conductive semiconductor layer to the second conductive semiconductor layer, and
- wherein a first doping concentration of the first dopant in the first region is greater than a second doping concentration of the first dopant in the second region.
Dependencies are inferred from the claim text.