H01S 5/2206
Based on iii-v materials
Official title: {based on III-V materials}
H01S5/2206 (Based on iii-v materials) appears on 390 US grants and 321 published applications in this corpus.
Search patents in H01S- Granted patents
- 390
- Published applications
- 321
- Assignees
- 140
- Inventors
- 778
- Latest grant
- 8 Sep 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1980 | 1 | 0 |
| 1981 | 0 | 0 |
| 1982 | 0 | 0 |
| 1983 | 0 | 0 |
| 1984 | 0 | 0 |
| 1985 | 0 | 0 |
| 1986 | 0 | 0 |
| 1987 | 3 | 0 |
| 1988 | 1 | 0 |
| 1989 | 2 | 0 |
| 1990 | 0 | 0 |
| 1991 | 6 | 0 |
| 1992 | 4 | 0 |
| 1993 | 9 | 0 |
| 1994 | 7 | 0 |
| 1995 | 15 | 0 |
| 1996 | 9 | 0 |
| 1997 | 9 | 0 |
| 1998 | 14 | 0 |
| 1999 | 17 | 0 |
| 2000 | 9 | 0 |
| 2001 | 12 | 7 |
| 2002 | 8 | 12 |
| 2003 | 15 | 10 |
| 2004 | 12 | 25 |
| 2005 | 14 | 33 |
| 2006 | 15 | 14 |
| 2007 | 19 | 22 |
| 2008 | 11 | 19 |
| 2009 | 13 | 11 |
| 2010 | 21 | 10 |
| 2011 | 7 | 7 |
| 2012 | 6 | 4 |
| 2013 | 7 | 7 |
| 2014 | 8 | 3 |
| 2015 | 8 | 15 |
| 2016 | 9 | 6 |
| 2017 | 6 | 7 |
| 2018 | 7 | 12 |
| 2019 | 11 | 18 |
| 2020 | 11 | 18 |
| 2021 | 11 | 24 |
| 2022 | 15 | 13 |
| 2023 | 18 | 6 |
| 2024 | 7 | 8 |
| 2025 | 9 | 7 |
| 2026 | 4 | 3 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Subgroups
Granted patents
Recent patents
- Inverted slab-coupled optical waveguide8 Sep 2026US 12,731,964 B2Cisco Technology, Inc.
- Semiconductor laser structure for higher-order mode suppression25 Aug 2026US 12,719,234 B2FreeSpace Photonics, Inc.
- High-power semiconductor light-emitting chip with longitudinal carrier modulation and manufacturing method therefor4 Aug 2026US 12,700,718 B2Suzhou Everbright Photonics Co., Ltd.
- Semiconductor optical device and manufacturing method therefor28 Apr 2026US 12,614,893 B2LumentumRadiant GmbH
- Semiconductor device with selective area epitaxy growth utilizing a mask to suppress or enhance growth at the edges11 Nov 2025US 12,470,045 B2Ciena Corporation
- Optical semiconductor device16 Jul 2026US 2026/0204876 A1Lumentum Operations LLC
- Super-luminescent diode and external cavity laser including the same7 May 2026US 2026/0130007 A1Electronics and Telecommunications Research Institute
- Semiconductor Device With Selective Area Epitaxy Growth Utilizing a Mask to Suppress or Enhance Growth at the Edges5 Feb 2026US 2026/0039091 A1Ciena Corporation
- Distributed Feedback (DFB) Interband Cascade Lasers With Hybrid Cladding Layers6 Nov 2025US 2025/0343394 A1The Board of Regents of the University of Oklahoma
- Optoelectronic semiconductor component and method for producing an optoelectronic semiconductor component18 Sep 2025US 2025/0293483 A1ams-OSRAM International GmbH
Most cited
By later US patents
- Nitride compound semiconductor light emitting device139US 6,242,761 B1Kabushiki Kaisha Toshiba · 2001
- Compound semiconductor light-emitting device of gallium nitride series84US 6,067,309 AKabushiki Kaisha Toshiba · 2000
- Method for forming group-III nitride semiconductor layer and group-III nitride semiconductor device78US 6,841,410 B2NEC Corporation · 2005
- Laser diode and semiconductor light-emitting device producing visible-wavelength radiation75US 6,614,821 B1Ricoh Company, Ltd. · 2003
- Epitaxial lateral overgrowth of gallium nitride based semiconductive oxide selective growth mask and method for fabricating the same69US 6,320,209 B1Sharp Kabushiki Kaisha · 2001