Semiconductor optical device and manufacturing method therefor
AssigneeLumentumRadiant GmbH
InventorsKazuki Suga, Kouji Nakahara
Life of this patent
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Abstract
A semiconductor optical device includes: a lower mesa structure extending in a stripe shape and composed of some layers including an active layer; a buried layer configured to bury both sides of the lower mesa structure and made of indium phosphide; and an upper mesa structure extending in a stripe shape and composed of some layers including a bottom layer made of phosphorus-free materials, the bottom layer having a bottom surface protruding from a topmost layer of the lower mesa structure, the bottom surface being in contact with the lower mesa structure and the buried layer.
Claims17
A semiconductor optical device comprising:
- a lower mesa structure extending in a stripe shape and composed of some layers including an active layer;
- a buried layer configured to bury both sides of the lower mesa structure and made of indium phosphide;
- and
- an upper mesa structure extending in a stripe shape and composed of some layers including a bottom layer made of phosphorus-free materials, the bottom layer having a bottom surface protruding from a topmost layer of the lower mesa structure, the bottom surface being in contact with the lower mesa structure and the buried layer,
- wherein the buried layer has a top horizontal surface that extends laterally outward beyond edges of the upper mesa structure,
- wherein the buried layer includes a protrusion extending above, with respect to a substrate of the semiconductor optical device, the top horizontal surface, and
- wherein the protrusion is in direct contact with the bottom surface of the bottom layer.
A method for manufacturing a semiconductor optical device, the method comprising:
- forming a mesa stripe structure, the mesa stripe structure including a lower mesa structure extending in a stripe shape and composed of some layers including an active layer, the mesa stripe structure including an upper mesa structure extending in a stripe shape on the lower mesa structure and composed of some layers including a bottom layer, the bottom layer having a bottom surface protruding from a topmost layer of the lower mesa structure, the bottom layer being made of phosphorus-free materials;
- and
- forming a buried layer made of indium phosphide on both sides of the lower mesa structure, by crystal growth, to be in contact with the bottom surface,
- wherein the crystal growth is performed with the upper mesa structure, except for the bottom surface, covered with a patterning mask.
Dependencies are inferred from the claim text.