US 12,700,718 B2 · High-power semiconductor light-emitting chip with longitudinal carrier modulation and manufacturing method therefor

Abstract

The present application provides a high-power semiconductor light-emitting chip with longitudinal carrier modulation and a manufacturing method therefor. The high-power semiconductor light-emitting chip with longitudinal carrier modulation includes: an active layer; a first semiconductor cell layer disposed on the active layer, wherein the first semiconductor cell layer includes a contact doped layer, the first semiconductor cell layer includes a plurality of current blocking regions that are disposed at least in the contact doped layer and distributed in a slow-axis direction, and the parts of the first semiconductor cell layer between neighboring current blocking regions act as current injection regions, wherein a current density function J(z) of current density in the active layer satisfies: J ⁡ ( z ) = ( J op - J 0 ) · f ⁡ ( z ) + J 0 ; f ⁡ ( z ) = N p ( z ) 1 L · ∫ L 0 N p ( z ) ⁢ dz ; wherein J 0 = α ⁢ N 0 + bN 0 2 + cN 0 3 , N 0 = N tr ⁢ exp ⁡ ( α i + a m Γ ⁢ g 0 ) ; and an average resistivity r(z) of corresponding current injection regions and current blocking regions at any position in the cavity-length direction satisfies r ⁡ ( z ) = r 0 · 1 f ⁡ ( z ) + J 0 / ( J op - J 0 ) , where r0 is a coefficient of r(z).

A high-power semiconductor light-emitting chip with longitudinal carrier modulation, comprising:

an active layer;
and
a first semiconductor cell layer disposed on the active layer, wherein the first semiconductor cell layer comprises a contact doped layer, the first semiconductor cell layer comprises a plurality of current blocking regions that are disposed at least in the contact doped layer and distributed in a slow-axis direction, each current blocking region extends from a rear cavity surface to a front cavity surface of the high-power semiconductor light-emitting chip with longitudinal carrier modulation, and the parts of the first semiconductor cell layer between neighboring current blocking regions act as current injection regions,
wherein a current density function J(z) of current density in the active layer satisfies:
J
⁡
(
z
)
=
(
J
o
⁢
p
-
J
0
)
·
f
⁡
(
z
)
+
J
0
f
⁡
(
z
)
=
N
p
(
z
)
1
L
·
∫
0
L
N
p
(
z
)
⁢
d
⁢
z
wherein
J
0
=
α
⁢
N
0
+
b
⁢
N
0
2
+
c
⁢
N
0
3
,
N
0
=
N
t
⁢
r
⁢
exp
⁢
(
α
i
+
a
m
Γ
⁢
g
0
)
where Jop is a preset operating current density of the active layer, J0 is a non-stimulated radiation current density when an injection current density in the active layer is equal to the preset operating current density, the non-stimulated radiation current density being equal to the sum of a carrier leakage current density, a spontaneous radiation recombination current density and a non-radiation recombination current density, α is a carrier leakage coefficient, b is a spontaneous radiation recombination coefficient, c is a non-radiation recombination coefficient, z is a position in the cavity-length direction of the high-power semiconductor light-emitting chip with longitudinal carrier modulation, Np(z) is a photon density of the active layer in the cavity-length direction, f(z) is a normalized photon density distribution function of the active layer, N0 is a carrier concentration of the active layer, L is a cavity length of the high-power semiconductor light-emitting chip with longitudinal carrier modulation, Ntr is a transparent carrier density of the material of the active layer, g0 is a gain coefficient of the material of the active layer, Γ is an optical limiting factor of the active layer, αi is an internal loss of the high-power semiconductor light-emitting chip with longitudinal carrier modulation, and αm is a cavity surface loss of the high-power semiconductor light-emitting chip with longitudinal carrier modulation;
an average resistivity r(z) of corresponding current injection regions and current blocking regions at any position in the cavity-length direction satisfies
r
⁡
(
z
)
=
r
0
·
1
f
⁡
(
z
)
+
J
0
/
(
J
o
⁢
p
-
J
0
)
,
where r0 is a coefficient of r(z);
and a width t(z) of any one of the current injection regions in the slow-axis direction satisfies
t
⁡
(
z
)
/
T
=
(
f
⁡
(
z
)
+
J
0
J
o
⁢
p
-
J
0
)
/
(
f
max
+
J
0
J
o
⁢
p
-
J
0
)
where T is a distance between central axes of neighboring current blocking regions, and fmax is a maximum value of f(z).

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High-power semiconductor light-emitting chip with longitudinal carrier modulation and manufacturing method therefor

Life of this patent

High-power semiconductor light-emitting chip with longitudinal carrier modulation and manufacturing method therefor

Life of this patent

Abstract

Claims17