H01S 5/2207
Gaasp based
Official title: {GaAsP based}
H01S5/2207 (Gaasp based) appears on 10 US grants and 9 published applications in this corpus.
Search patents in H01S- Granted patents
- 10
- Published applications
- 9
- Assignees
- 13
- Inventors
- 39
- Latest grant
- 15 Oct 2024
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1980 | 1 | 0 |
| 1981 | 0 | 0 |
| 1982 | 0 | 0 |
| 1983 | 0 | 0 |
| 1984 | 0 | 0 |
| 1985 | 0 | 0 |
| 1986 | 0 | 0 |
| 1987 | 0 | 0 |
| 1988 | 0 | 0 |
| 1989 | 0 | 0 |
| 1990 | 0 | 0 |
| 1991 | 0 | 0 |
| 1992 | 2 | 0 |
| 1993 | 0 | 0 |
| 1994 | 0 | 0 |
| 1995 | 1 | 0 |
| 1996 | 0 | 0 |
| 1997 | 1 | 0 |
| 1998 | 0 | 0 |
| 1999 | 0 | 0 |
| 2000 | 1 | 0 |
| 2001 | 0 | 0 |
| 2002 | 0 | 0 |
| 2003 | 0 | 0 |
| 2004 | 0 | 0 |
| 2005 | 0 | 0 |
| 2006 | 0 | 0 |
| 2007 | 0 | 0 |
| 2008 | 0 | 0 |
| 2009 | 0 | 0 |
| 2010 | 0 | 1 |
| 2011 | 0 | 0 |
| 2012 | 1 | 0 |
| 2013 | 0 | 0 |
| 2014 | 0 | 0 |
| 2015 | 0 | 0 |
| 2016 | 0 | 1 |
| 2017 | 1 | 1 |
| 2018 | 0 | 1 |
| 2019 | 1 | 0 |
| 2020 | 0 | 3 |
| 2021 | 0 | 1 |
| 2022 | 0 | 0 |
| 2023 | 0 | 0 |
| 2024 | 1 | 0 |
| 2025 | 0 | 0 |
| 2026 | 0 | 1 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Semiconductor laser apparatus and semiconductor laser device15 Oct 2024US 12,119,611 B2Nuvoton Technology Corporation Japan
- Quantum cascade laser with current blocking layers6 Aug 2019US 10,374,393 B2Alpes Lasers SA
- Method for producing an integrated optical circuit14 Feb 2017US 9,568,676 B2Caliopa NV
- Semiconductor laser and method of manufacturing the same3 Jul 2012US 8,213,477 B2Renesas Electronics Corporation
- Buried heterostructure laser with quaternary current blocking layer22 Feb 2000US 6,028,875 ANortel Networks Limited
- Super-luminescent diode and external cavity laser including the same7 May 2026US 2026/0130007 A1Electronics and Telecommunications Research Institute
- Semiconductor laser apparatus and semiconductor laser device9 Dec 2021US 2021/0384701 A1Nuvoton Technology Corporation Japan
- Iii-v-on-silicon nanoridge opto-electronic device with carrier blocking layers25 Jun 2020US 2020/0203929 A1Imec Vzw
- Iii-v-on-silicon nanoridge opto-electronic device with a regrown fin structure25 Jun 2020US 2020/0203930 A1Imec Vzw
- Semiconductor laser25 Jun 2020US 2020/0203932 A1Sumitomo Electric Industries, Ltd.
Most cited
By later US patents
- Buried heterostructure laser with quaternary current blocking layer29US 6,028,875 ANortel Networks Limited · 2000
- Method of making a semiconductor light-emitting device utilizing low-temperature vapor-phase deposition14US 4,188,244 AMatsushita Electric Industrial Co., Ltd. · 1980
- Semiconductor laser producing visible light11US 5,161,167 AMitsubishi Denki Kabushiki Kaisha · 1992
- Semiconductor laser device5US 5,146,467 AMitsubishi Denki Kabushiki Kaisha · 1992
- Method for producing an integrated optical circuit3US 9,568,676 B2Caliopa NV · 2017