H01S 5/2205
Comprising special burying or current confinement layers
Official title: {comprising special burying or current confinement layers}
H01S5/2205 (Comprising special burying or current confinement layers) appears on 1,569 US grants and 1,485 published applications in this corpus.
Search patents in H01S- Granted patents
- 1,569
- Published applications
- 1,485
- Assignees
- 390
- Inventors
- 2,322
- Latest grant
- 29 Sep 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1977 | 1 | 0 |
| 1978 | 0 | 0 |
| 1979 | 1 | 0 |
| 1980 | 3 | 0 |
| 1981 | 1 | 0 |
| 1982 | 2 | 0 |
| 1983 | 1 | 0 |
| 1984 | 0 | 0 |
| 1985 | 1 | 0 |
| 1986 | 2 | 0 |
| 1987 | 8 | 0 |
| 1988 | 3 | 0 |
| 1989 | 5 | 0 |
| 1990 | 1 | 0 |
| 1991 | 10 | 0 |
| 1992 | 11 | 0 |
| 1993 | 27 | 0 |
| 1994 | 21 | 0 |
| 1995 | 30 | 0 |
| 1996 | 35 | 0 |
| 1997 | 24 | 0 |
| 1998 | 32 | 0 |
| 1999 | 31 | 0 |
| 2000 | 32 | 0 |
| 2001 | 30 | 29 |
| 2002 | 34 | 53 |
| 2003 | 67 | 58 |
| 2004 | 57 | 90 |
| 2005 | 56 | 128 |
| 2006 | 86 | 84 |
| 2007 | 54 | 91 |
| 2008 | 54 | 79 |
| 2009 | 73 | 66 |
| 2010 | 80 | 64 |
| 2011 | 52 | 42 |
| 2012 | 39 | 51 |
| 2013 | 50 | 45 |
| 2014 | 45 | 29 |
| 2015 | 50 | 52 |
| 2016 | 39 | 34 |
| 2017 | 41 | 41 |
| 2018 | 47 | 58 |
| 2019 | 51 | 45 |
| 2020 | 46 | 59 |
| 2021 | 38 | 86 |
| 2022 | 45 | 48 |
| 2023 | 39 | 59 |
| 2024 | 43 | 45 |
| 2025 | 39 | 26 |
| 2026 | 32 | 23 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Subgroups
Granted patents
Recent patents
- Ridge waveguide laser with dielectric current confinement29 Sep 2026US 12,749,872 B2Applied Optoelectronics, Inc.
- Semiconductor optical device with a buried heterostructure (BH) having reduced parasitic capacitance and reduced inter-diffusion15 Sep 2026US 12,738,715 B2Applied Optoelectronics, Inc.
- Semiconductor laser device8 Sep 2026US 12,731,963 B2Mitsubishi Electric Corporation
- Inverted slab-coupled optical waveguide8 Sep 2026US 12,731,964 B2Cisco Technology, Inc.
- Optoelectronic device comprising a III-V semiconductor membrane laser source forming a lateral p-i-n junction1 Sep 2026US 12,726,001 B2Commissariat A L' Energie Atomique Et Aux Energies Alternatives
- Semiconductor optical device24 Sep 2026US 2026/0291183 A1Lumentum Japan, Inc.
- Heterogeneous lasers with facets optimized for high power3 Sep 2026US 2026/0261096 A1
- Nitride-based semiconductor light-emitting element and manufacturing method thereof13 Aug 2026US 2026/0239778 A1Nuvoton Technology Corporation Japan
- Buried type optical semiconductor device30 Jul 2026US 2026/0221727 A1Lumentum Operations LLC
- Optical semiconductor device16 Jul 2026US 2026/0204876 A1Lumentum Operations LLC
Most cited
By later US patents
- Hybrid III-V silicon laser formed by direct bonding247US 8,620,164 B2Intel Corporation · 2013
- Efficient semiconductor light-emitting device and method222US 5,493,577 ASandia Corporation · 1996
- Structure and method for planar lateral oxidation in passive devices196US 6,548,908 B2Xerox Corporation · 2003
- Structure and method for planar lateral oxidation in active182US 6,674,090 B1Xerox Corporation · 2004
- Vertical-cavity surface-emitting lasers with intra-cavity structures163US 5,245,622 ABandgap Technology Corporation · 1993