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US 8,620,164 B2Granted
Hybrid III-V silicon laser formed by direct bonding
AssigneeIntel Corporation
InventorsJohn Heck, Hanan Bar, Richard Jones, Hyundai Park
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Abstract
Described herein is a hybrid III-V Silicon laser comprising a first semiconductor region including layers of semiconductor materials from group III, group IV, or group V semiconductor to form an active region; and a second semiconductor region having a silicon waveguide and bonded to the first semiconductor region via direct bonding at room temperature of a layer of the first semiconductor region to a layer of the second semiconductor region.
Claims18
An apparatus comprising:
- a first semiconductor region including layers of semiconductor materials from group III, group IV, or group V semiconductor to form an active region;
- a second semiconductor region having a silicon waveguide and bonded to the first semiconductor region via direct bonding of a layer of the first semiconductor region to a layer of the second semiconductor region, wherein the layer of the first semiconductor region is composed of indium phosphide (InP), wherein the layer of the second semiconductor region is composed of silicon (Si), and wherein a surface of the layer of InP is directly bonded to a surface of the layer of Si;
- a first electrical contact coupled to the active region of the first semiconductor region;
- and
- a pair of second electrical contacts, coupled to the Si layer, of the second semiconductor region, wherein electric current flows from the first electrical contact to the pair of second electrical contacts through the Si layer, and wherein the layer of InP extends within a length of the active region.
2 more elements
A system comprising:
- a receiver to receive an optical signal;
- and
- a transmitter to transmit the optical signal to the receiver over an optical waveguide, the transmitter comprising:
- a hybrid silicon laser to generate a laser beam, the hybrid silicon laser including:
- a first semiconductor region including layers of semiconductor materials from group III, group IV, or group V semiconductor to form an active region;
- and
- a second semiconductor region forming a silicon waveguide and bonded to the first semiconductor region via direct bonding of a layer of the first semiconductor region to a layer of the second semiconductor region, wherein the layer of the first semiconductor region is composed of indium phosphide (InP), wherein the layer of the second semiconductor region is composed of silicon (Si), and wherein a surface of the layer of InP is directly bonded to a surface of the layer of Si;
- a first electrical contact coupled to the active region of the first semiconductor region;
- and
- a pair of second electrical contacts, coupled to the Si layer, of the second semiconductor region, wherein electric current flows from the first electrical contact to the pair of second electrical contacts through the Si layer, and wherein the layer of InP extends within a length of the active region.
7 more elements
Dependencies are inferred from the claim text.