H01S 5/2214
Based on oxides or nitrides
Official title: {based on oxides or nitrides}
H01S5/2214 (Based on oxides or nitrides) appears on 459 US grants and 482 published applications in this corpus.
Search patents in H01S- Granted patents
- 459
- Published applications
- 482
- Assignees
- 183
- Inventors
- 915
- Latest grant
- 29 Sep 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1980 | 1 | 0 |
| 1981 | 0 | 0 |
| 1982 | 2 | 0 |
| 1983 | 0 | 0 |
| 1984 | 0 | 0 |
| 1985 | 0 | 0 |
| 1986 | 1 | 0 |
| 1987 | 0 | 0 |
| 1988 | 1 | 0 |
| 1989 | 0 | 0 |
| 1990 | 0 | 0 |
| 1991 | 1 | 0 |
| 1992 | 1 | 0 |
| 1993 | 1 | 0 |
| 1994 | 3 | 0 |
| 1995 | 3 | 0 |
| 1996 | 8 | 0 |
| 1997 | 6 | 0 |
| 1998 | 7 | 0 |
| 1999 | 6 | 0 |
| 2000 | 7 | 0 |
| 2001 | 6 | 8 |
| 2002 | 9 | 18 |
| 2003 | 21 | 20 |
| 2004 | 22 | 30 |
| 2005 | 15 | 51 |
| 2006 | 25 | 42 |
| 2007 | 23 | 32 |
| 2008 | 26 | 37 |
| 2009 | 31 | 29 |
| 2010 | 34 | 31 |
| 2011 | 30 | 21 |
| 2012 | 18 | 21 |
| 2013 | 24 | 12 |
| 2014 | 12 | 9 |
| 2015 | 10 | 10 |
| 2016 | 10 | 8 |
| 2017 | 13 | 7 |
| 2018 | 10 | 14 |
| 2019 | 10 | 8 |
| 2020 | 11 | 16 |
| 2021 | 8 | 19 |
| 2022 | 11 | 6 |
| 2023 | 7 | 18 |
| 2024 | 12 | 7 |
| 2025 | 7 | 5 |
| 2026 | 6 | 3 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Subgroups
Granted patents
Recent patents
- Ridge waveguide laser with dielectric current confinement29 Sep 2026US 12,749,872 B2Applied Optoelectronics, Inc.
- Corrugated buried heterostructure laser and method for fabricating the same25 Aug 2026US 12,719,238 B2National Research Council of Canada
- Self-aligned ridge waveguide laser structure, method for fabrication, and method for use with interposer-based pics4 Aug 2026US 12,699,331 B2
- Tunable wavelength gain chip array for sensing and communication26 May 2026US 12,640,539 B2King Abdullah University of Science and Technology
- Nitride-based semiconductor light-emitting element and manufacturing method thereof28 Apr 2026US 12,615,885 B2Nuvoton Technology Corporation Japan
- Nitride-based semiconductor light-emitting element and manufacturing method thereof13 Aug 2026US 2026/0239778 A1Nuvoton Technology Corporation Japan
- Light emitting structure of edge emitting semiconductor, and method for manufacturing same2 Jul 2026US 2026/0188979 A1Everbright Institute of Semiconductor Photonics Co., Ltd.
- Patterned embedding on narrow stripe single mode transverse lasers11 Jun 2026US 2026/0163334 A1II-Vi Delaware, Inc.
- Edge emitting semicondcutor laser diode; method for producing a semicondcutor laser device and semicondcutor laser device18 Dec 2025US 2025/0385485 A1ams-OSRAM International GmbH
- Photonic device and method of fabricating same3 Apr 2025US 2025/0112442 A1
Most cited
By later US patents
- Structure and method for planar lateral oxidation in passive devices196US 6,548,908 B2Xerox Corporation · 2003
- Structure and method for planar lateral oxidation in active182US 6,674,090 B1Xerox Corporation · 2004
- Nitride compound semiconductor light emitting device139US 6,242,761 B1Kabushiki Kaisha Toshiba · 2001
- Method of manufacture for an ultraviolet laser diode116US 9,246,311 B1Soraa Laser Diode, Inc. · 2016
- Conductive element with lateral oxidation barrier115US 5,719,891 APicolight Incorporated · 1998