Nitride compound semiconductor light emitting device

A nitride compound semiconductor light emitting device comprising:

• an electrically conductive nitride compound semiconductor layer;
• a current blocking layer stacked on said nitride compound semiconductor layer and having an opening;
• a buffer layer made of B(1−x−y−z)InxAlyGazN (0≦x≦1, 0≦y≦1, 0≦z≦1) stacked to cover said current blocking layer and said nitride compound semiconductor layer at said opening;
• and
• a layer made of B(1−x2−y2−z2)Inx2Aly2Gaz2N (0≦x2≦1, 0≦y2≦1, 0≦z2≦1) stacked on said buffer layer.

A nitride compound semiconductor light emitting device comprising:

• a substrate;
• a first buffer layer stacked on said substrate;
• an electrically conductive layer stacked on said buffer layer and made of B(1−x1−y1−z1)Inx1Aly1Gaz1N (0≦x1≦1, 0≦y1≦1, 0≦z1≦1);
• a current blocking layer stacked on said electrically conductive layer and having an opening;
• a second buffer layer stacked to cover said current blocking layer and said electrically conductive layer at said opening, said second buffer layer being made of a B(1−x2−y2−z2)Inx2Aly2Gaz2N (0≦z2≦1, 0≦y2≦1, 0z2≦1);
• and
• an active layer stacked on said second buffer layer and made of B(1−x3−y3−z3)Inx3Aly3Gaz3N (0≦x3≦1, 0≦y3≦1, 0≦z3≦1).