Light emitting structure of edge emitting semiconductor, and method for manufacturing same

A light emitting structure of an edge emitting semiconductor, comprising:

• a semiconductor substrate layer;
• a lower confinement layer, an active layer, and an upper confinement layer sequentially stacked on the semiconductor substrate layer;
• wherein
• the light emitting structure of an edge emitting semiconductor is provided with a first side wall and a second side wall oppositely arranged, and the first side wall and the second side wall are distributed in a slow axis direction of the light emitting structure of an edge emitting semiconductor;
• and the light emitting structure of an edge emitting semiconductor is provided with a current injection region positioned between the first side wall and the second side wall, and the current injection region is spaced apart from both the first side wall and the second side wall;
• and
• a feature trench positioned at least on one side of the current injection region in the slow axis direction;
• wherein the feature trench is positioned at least in the upper confinement layer, the feature trench is provided with a feature side wall towards the current injection region, and the feature side wall and the current injection region are spaced apart in the slow axis direction;
• and a surface of the feature side wall is provided with a plurality of protrusions towards the current injection region.