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US 6,674,090 B1Granted
Structure and method for planar lateral oxidation in active
AssigneeXerox Corporation
InventorsChristopher L. Chua, Philip D. Floyd, Thomas L. Paoli, Decai Sun
Life of this patent
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Abstract
An active semiconductor device is made using planar lateral oxidation to define a core region that is surrounded by regions of buried oxidized semiconductor material in. The buried oxidized semiconductor material provides optical waveguiding, and or a defined electrical path.
Claims11
A semiconductor structure comprising:
- a substrate;
- a plurality of semiconductor layers formed on said substrate with a first of said plurality of semiconductor layers being a top layer and with a second of said plurality of semiconductor layers comprising an oxidizable layer;
- and
- the oxidizable layer penetrated by at least three holes, said oxidizable layer oxidized from said at least three holes to form a substantially straight oxidized line that is continuous and unbroken by unoxidized regions, said at least three holes arranged to define a non-oxidized continuous and unbroken stripe region bordered by said substantially straight oxidized line.
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A semiconductor structure comprising:
- a substrate;
- a plurality of semiconductor layers formed on said substrate with a first of said plurality of semiconductor layers being a top layer and with a second of said plurality of semiconductor layers comprising an oxidizable layer;
- and
- an oxidizable layer penetrated by at least six holes arranged to form a first substantially straight line and a second substantially straight line, together forming not more than two approximately parallel lines, each hole of said six holes extending from said top layer, with a corresponding region of said oxidizable layer being oxidized to form an approximation of two parallel unbroken oxidized lines, the two parallel unbroken oxidized lines define a non-oxidized unbroken continuous stripe region bounded by said approximation of two approximately parallel oxidized lines.
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A semiconductor waveguide comprising:
- a substrate;
- a plurality of semiconductor layers formed on said substrate with a first of said plurality of semiconductor layers being a top layer and with a second of said plurality of semiconductor layers comprising an oxidizable layer;
- and
- the oxidizable layer penetrated by at least three holes, each hole of said three holes extending from said top layer, with a corresponding region of said oxidizable layer being oxidized to form an approximation of a substantially straight unbroken oxidized line, the least three holes arranged in a line to define a non-oxidized unbroken continuous stripe region bordered, by, said approximation of a substantially straight oxidized line, the non-oxidized unbroken continuous stripe serving as a waveguide to transmit a signal in a direction perpendicular to the axis of each hole in the at least three holes.
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Dependencies are inferred from the claim text.