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US 6,548,908 B2Granted
Structure and method for planar lateral oxidation in passive devices
AssigneeXerox Corporation
InventorsChristopher L. Chua, Philip D. Floyd, Thomas L. Paoli, Decai Sun
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Abstract
A passive semiconductor device structure is made using planar lateral oxidation to define a buried oxidized semiconductor structure such as a passive waveguide, microlens or DBR mirror stack.
Claims18
A passive semiconductor structure comprising:
- a substrate;
- a plurality of semiconductor layers formed on said substrate wherein one of said plurality of semiconductor layers is a top layer and at least one of said plurality of semiconductor layers comprises an oxidizable material;
- and
- a plurality of holes extending from said top layer to penetrate into said at least one of said plurality of semiconductor layers that comprises an oxidizable material, the plurality of holes used to form an oxidized lateral surface, the oxidized lateral surface to serve as a wall of a waveguide.
1 more element
A method for making a passive semiconductor structure comprising:
- providing a substrate;
- forming a plurality of semiconductor layers on said substrate wherein one of said plurality of semiconductor layers is a top layer and at least one of said plurality of semiconductor layers comprises an oxidizable material;
- forming a plurality of holes extending from said top layer to penetrate into said at least one of said plurality of semiconductor layers that comprises an oxidizable material;
- and,
- laterally oxidizing a portion of said oxidizable material from said plurality of holes to form a wall of a waveguide.
2 more elements
A method of forming a waveguide comprising the operations of:
- providing a substrate;
- forming a plurality of semiconductor layers on said substrate wherein one of said plurality of semiconductor layers is a top layer and at least one of said plurality of semiconductor layers comprises an oxidizable material;
- forming a plurality of holes extending from said top layer to penetrate into said at least one of said plurality of semiconductor layers that comprises an oxidizable material;
- and,
- laterally oxidizing a portion of said oxidizable material from said plurality of holes to form a wall of the waveguide.
2 more elements
Dependencies are inferred from the claim text.